Abstract
Vapor deposition of smooth, microstructurally uniform amorphous films on dissimilar substrates requires coalescence of clusters that form during initial nucleation. We have developed techniques that provide sub-monolayer sensitivity to this phenomenon, relying on real time spectroscopie ellipsometry observations during ultrathin film growth (thicknesses < 50 Å). An investigation of tetrahedrally-bonded amorphous semiconductors lends insights into the role of nucleation density and adatom surface diffusion in determining the ultimate atomic-scale roughness on the film.
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Acknowledgement
This work was supported by the National Science Foundation under grant Nos. DMR-8901031 and DMR-8957159. Partial funding was also provided by the Solar Energy Research Institute under subcontract XG-1-10063-10, and by Electric Power Research Institute.
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Collins, R.W., An, I., Li, Y.M. et al. Surface Microstructural Evolution of Ultrathin films by Real time Spectroscopic Elupsometry. MRS Online Proceedings Library 237, 235–242 (1991). https://doi.org/10.1557/PROC-237-235
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DOI: https://doi.org/10.1557/PROC-237-235