Abstract
Lead zirconate-titanate (PZT) thin films were prepared by the laser ablation technique. The PZT (Zr/Ti=53/47) target was irradiated using a focused q-switched Nd:YAG laser (15 ns, 100 mJ at 1.064 μm). The as-deposited films were amorphous as indicated by X-ray powder patterns, but crystallized readily with brief annealing above 650°C. The dielectric constant and the resistivity of the crystallized films were studied using a parallel-plate type capacitor structure.
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Chiang, C.K., Cook, L.P., Schenck, P.K. et al. Lead Zirconate-Titanate Thin Films Prepared by the Laser Ablation Technique. MRS Online Proceedings Library 200, 133–137 (1990). https://doi.org/10.1557/PROC-200-133
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DOI: https://doi.org/10.1557/PROC-200-133