Abstract
Microwave excited electron cyclotron resonance (ECR) plasmas have been used to fabricate a-Si:H,Cl and a-SiC:H films. By varying the absorbed microwave power, highly photoconductive a-Si:H,Cl films were obtained. The a-SiC:H films do not have appreciable photoconductivity, but they show a bright, broad continuous wave (cw) photoluminescence (PL) in the visible region under near-uv excitation. We have measured the photoluminescence decay in the picosecond range and have resolved the spectra into four distinct components. The four luminescence components may correspond to various recombination mechanisms of photogenerated electron-hole pairs.
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Acknowledgements
This work was supported by Texas Advanced Technology Program and J.C. Schumacher Company. We would also like to thank Walter L. Borst for use of the time-resolved spectroscopy system.
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Gangopadhyay, S., Trost, T., Kristiansen, M. et al. Characterization of a-Si:H,Cl and a-Sic:H Films Prepared by Electron Cyclotron Resonance Plasma. MRS Online Proceedings Library 192, 627–632 (1990). https://doi.org/10.1557/PROC-192-627
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DOI: https://doi.org/10.1557/PROC-192-627