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Effects of Interfaces on the a-Si:H Schottky Barrier Characteristics

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Abstract

A detailed study of hydrogenated amorphous silicon (a-Si:H) surfaces during etching and subsequent low temperature (T≤200°C) oxidation was carried out using in-situ and spectroscopic ellipsometry (SE). The microstructural information from SE is correlated with the properties of the corresponding evaporated Pd Schottky barrier structures. Oxide layers thinner than ~ 10 Å have little effect on the diode characteristics and electron surface recombination velocities. This is consistent with a porous structure for these oxides. Evidence is found from growth kinetics that higher density, compact oxide growth occurs for greater thicknesses. These oxides have a large effect on electron transport and surface recombination velocities consistent with the formation of metal-insulator-semiconductor structures.

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References

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Acknowledgments

The authors wish to acknowledge Dr. S. Fonash and P. McElheny for many helpful discussions and the modeling of the carrierc ollection efficiencies. This workw as supported by the Electrical Power Research Institute, and the National Science Foundation (Grant No. DMR-8957159)

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Authors and Affiliations

  1. Center for Electronic Materials and Processing, Department of Electrical Engineering, The Pennsylvania State University, University Park, PA, 16802, USA

    Y. M. Li, C. Malone, S. Kumar & C. R. Wronski

  2. Materials Research Laboratory and Department of Physics, The Pennsylvania State University, University Park, PA, 16802, USA

    H. V. Nguyen & R. W. Collins

  3. Also with the Department of Physics, USA

    Y. M. Li

  4. Also with Department of Engineering Science, and Materials Research Laboratory, USA

    C. R. Wronski

Authors
  1. Y. M. Li
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  2. C. Malone
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  3. S. Kumar
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  4. C. R. Wronski
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  5. H. V. Nguyen
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  6. R. W. Collins
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Li, Y.M., Malone, C., Kumar, S. et al. Effects of Interfaces on the a-Si:H Schottky Barrier Characteristics. MRS Online Proceedings Library 192, 219–224 (1990). https://doi.org/10.1557/PROC-192-219

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  • DOI: https://doi.org/10.1557/PROC-192-219

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