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Dielectric Charging in Low Temperature Silicon Nitride for RF-MEMS Capacitive Switches

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Abstract

The paper presents a systematic investigation of dielectric charging in low temperature silicon nitride for RF-MEMS capacitive switches. The investigation takes includes both the effect of dielectric film thickness as well as the effect of metal contacts. The investigation demonstrates that the charging process is asymmetric. It is shown that the amount of stored charge depends significantly on the dielectric film thickness, which is caused from the contribution of the space charge polarization mechanism. Finally, the results are compared with those of higher temperature silicon nitride.

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Authors and Affiliations

  1. School of Electrical and Computer Engineering, Georgia Institute of Technology, 777 Atlantic Drive NW, Atlanta, GA, 30332, USA

    Richard Daigler & John Papapolymerou

  2. Physics, Solid State Physis Section, University of Athens, Panepistimiopolis - Zografos, Athens, 15784, Greece

    George Papaioannou & Eleni Papandreou

Authors
  1. Richard Daigler
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  2. George Papaioannou
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  3. Eleni Papandreou
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  4. John Papapolymerou
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Daigler, R., Papaioannou, G., Papandreou, E. et al. Dielectric Charging in Low Temperature Silicon Nitride for RF-MEMS Capacitive Switches. MRS Online Proceedings Library 1075, 10750505 (2008). https://doi.org/10.1557/PROC-1075-J05-05

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  • DOI: https://doi.org/10.1557/PROC-1075-J05-05

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