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Transmission Electron Microscopy Study of Interface Region of Aln / 6H-Sic

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Transmission electron microscopy (TEM) study was performed to investigate the interface region of AlN/6H-SiC. Thick AlN layers were grown on a 3.5° off-axis 6H-SiC substrate at a temperature of 1790 °C for 100 hours by sublimation-recondensation method. The energy dispersive x-ray spectroscopy (EDXS) analysis indicated considerable amount of aluminum and nitrogen present in the substrate and Si and C present in AlN. Lattice images of cross-sectional TEM samples show a faceted interface with step growth.

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Authors and Affiliations

  1. Mechanical Engineering, Texas Tech University, 7th Street & Boston Avenue, Lubbock, 79409-1021, TX, USA

    Jharna Chaudhuri

  2. Department of Mechanical Engineering, Texas Tech University, 7th Street & Boston, Lubbock, 79409-1021, TX, USA

    Luke Owuor Nyakiti

  3. Department of Chemical Engineering, Kansas State University, Manhattan, 66506, KS, USA

    Peng Lu & James H. Edgar

  4. Department of Earth and Planetary Science, University of New Mexico, Albuquerque, 87131, NM, USA

    Peng Li

Authors
  1. Jharna Chaudhuri
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  2. Luke Owuor Nyakiti
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  3. Peng Lu
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  4. James H. Edgar
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  5. Peng Li
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Chaudhuri, J., Nyakiti, L.O., Lu, P. et al. Transmission Electron Microscopy Study of Interface Region of Aln / 6H-Sic. MRS Online Proceedings Library 1040, 1005 (2007). https://doi.org/10.1557/PROC-1040-Q10-05

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  • DOI: https://doi.org/10.1557/PROC-1040-Q10-05

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