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A Study of Tungsten-Titanium Barriers in Silver Metallization

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Abstract

This work investigated the viability of tungsten-titanium barrier layers for silver metallization. Reactive sputtered W-Ti was deposited on a Si wafer followed by an Ag thin film over layer. These samples were then annealed in vacuum at temperatures up to 700 °C. Characterization of these samples included using x-ray diffractometry, Rutherford backscattering spectrometry, scanning transmission microscopy, secondary ion mass spectroscopy, transmission electron microscopy, and four point probe analysis. The results indicated that the metal/diffusion barrier stack was stable up to 600 °C. Silicon started moving into the tungsten-titanium film at temperatures above 600 °C. Movement of Si resulted in local Si voiding. These results showed the promise of W-Ti as an effective barrier layer for silver metallization for process temperatures below 600 °C.

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Authors and Affiliations

  1. School of Materials, Arizona State University, Tempe, AZ, 85281, USA

    S. Bhagat, N. D. Theodore & T. L. Alford

  2. Freescale Semiconductor Inc., Tempe, AZ, 85284, USA

    N. D. Theodore

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  1. S. Bhagat
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  2. N. D. Theodore
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  3. T. L. Alford
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Bhagat, S., Theodore, N.D. & Alford, T.L. A Study of Tungsten-Titanium Barriers in Silver Metallization. MRS Online Proceedings Library 990, 810 (2006). https://doi.org/10.1557/PROC-0990-B08-10

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  • DOI: https://doi.org/10.1557/PROC-0990-B08-10

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