Abstract
Wet oxidation in the AlAs layer sandwiched between two GaAs plates was investigated for the temperature range of 400 to 480 °C. The oxidation rate increased with increasing thickness of the AlAs layer. Theoretical analysis based on the boundary layer diffusion was performed to account for the thickness effect. The theory is in excellent agreement with the experimental measurement.
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Ko, SC., Lee, S., Wang, HL. et al. Wet oxidation kinetics of AlAs at elevated temperatures. Journal of Materials Research 18, 1027–1030 (2003). https://doi.org/10.1557/JMR.2003.0140
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DOI: https://doi.org/10.1557/JMR.2003.0140