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Optical and structural properties of semi-insulating polycrystalline silicon thin films

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Abstract

Optical properties of semi-insulating polycrystalline silicon (SIPOS) thin films containing 30 at. % oxygen atoms are investigated in the near ultraviolet, visible and infrared region to improve knowledge on the structure and chemical bonding of these mixtures. An effective medium approximation model is used for a microscopic investigation of the oxide species involved as a function of the annealing temperature (600–1200 °C). The results are compared with other optical spectroscopies (infrared and Raman) and with transmission electron microscopy to give a selected picture of the pure and oxide components.

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Authors and Affiliations

  1. CNR, Istituto di Metodologie e Tecnologie per la Microelettronica, Stradale Primosole 50, 95121, Catania, Italy

    G. Compagnini

  2. Dipartimento di Fisica dell’Universita’ di Catania, Corso Italia 57, 95129, Catania, Italy

    S. Lombardo, R. Reitano & S. U. Campisano

Authors
  1. G. Compagnini
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  2. S. Lombardo
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  3. R. Reitano
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  4. S. U. Campisano
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Compagnini, G., Lombardo, S., Reitano, R. et al. Optical and structural properties of semi-insulating polycrystalline silicon thin films. Journal of Materials Research 10, 885–890 (1995). https://doi.org/10.1557/JMR.1995.0885

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  • DOI: https://doi.org/10.1557/JMR.1995.0885

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