Abstract
Solid-state reactions between niobium and gallium arsenide in both thin film and bulk forms were studied in the temperature range 400 to 1000 °C using transmission electron microscopy (TEM), metallography, scanning electron microscopy (SEM), and electron probe microanalysis (EPMA). Initially Nb4As3 and Nb5Ga3 formed at the interface and grew very slowly. Following an incubation period, NbAs and NbGa, nucleated and grew at rates several orders of magnitude faster than the initial phases. The resulting metastable diffusion path, Nb/NbGa3/NbAs/GaAs, was observed even after relatively long-term annealing and is believed to be kinetically stabilized. Formation of the other Nb–Ga binary compounds as predicted by the phase diagram was inhibited by nucleation and kinetic barriers. The observed reaction sequence is discussed considering the thermodynamics, kinetics, and possible growth mechanisms involved in the reaction.
Similar content being viewed by others
References
K. M. Yu, Ph.D. Thesis, University of California–Berkeley, 1987.
J. Ding, B. Lee, R. Gronsky, J. Washburn, D. Chin, and T. Van Duzer, Appl. Phys. Lett. 52, 135 (1988).
X. W. Wu, L. C. Zhang, P. Bradley, D. K. Chin, and T. Van Duzer, Appl. Phys. Lett. 50, 288 (1987).
K. Suh, H. K. Park, and K. L. Moazed, J. Vac. Sci. Technol. B 1, 365 (1983).
P. Ling, J-K. Chang, M-S. Lin, and J-C. Lou, Mater. Res. Soc. Proc. 48, 137 (1985).
S. D. Mukherjee, D. V. Morgan, and M. J. Howes, J. Vac. Sci. Technol. 16, 138 (1979).
S. D. Mukherjee, C. J. Palmstron, and J. G. Smith, J. Vac. Sci. Technol. 17, 904 (1980).
K. M. Yu, S. K. Cheung, T. Sands, J. M. Jaklevic, N. W. Cheung, and E. E. Haller, J. Appl. Phys. 60, 3235 (1986).
J. C. Lin, K. J. Schulz, K-C. Hsieh, and Y. A. Chang, in High Temperature Materials Chemistry IV.-3. Electronic Materials, edited by Z. A. Munir, D. C. Cubicciotti, and H. Tagawa (The Electrochem. Soc., Inc., Princeton, NJ, 1988). Also submitted to the J. Electrochem. Soc. for publication.
J. S. Kirkaldy and L. C. Brown, Can. Met. Quart. 2, 89 (1963).
J-C. Lin, K-C. Hsieh, K. J. Schulz, and Y. A. Chang, J. Mater. Res. 3, 148 (1988).
K. J. Schulz, X-Y. Zheng, and Y. A. Chang, Mater. Res. Soc. Symp. Proc. 108 (1987).
H. Kakibayashi and F. Nagata, Jpn. J. Appl. Phys. 24, L905 (1985).
M. R. Yu, F. R. Zhu, X. Wang, B. Q. Wang, K. Zao, P. S. Pu, and C. L. Lei, Chin. J. Semicond. 6, 55 (1985).
F. M. d’Heurle, J. Mater. Res. 3, 167 (1988).
F. M. d’Heurle and P. Gas, J. Mater. Res. 1, 205 (1986).
T. Sands, V. G. Keramidas, J. Washburn, and R. Gronsky, Appl. Phys. Lett. 48, 402 (1986).
J. C. Lin, X-Y. Zheng, K. C. Hsieh, and Y. A. Chang, Mater. Res. Soc. Symp. Proc. 102 (1987).
K. J. Schulz, Ph.D. Thesis, University of Wisconsin-Madison, 1988.
F-Y. Shiau, Y. A. Chang, and L. J. Chen, J. Electronic Mater. 17, 433 (1988); also F-Y. Shiau, Y. Zuo, X-Y. Zheng, J-C. Lin, and Y. A. Chang, Mater. Res. Soc. Symp. Proc. 119 (1988).
M. Ronay, Appl. Phys. Lett. 42, 577 (1983).
P. Feschotte and E. L. Spitz, J. Less-Common Metals 37, 233 (1974).
S. Rundqvist, B. Carlsson, and C. Pontchour, Acta Chem. Scand. 23, 2188 (1969).
U. Gösele and K. N. Tu, J. Appl. Phys. 53, 3252 (1982).
F. J. J. van Loo and G. D. Rieck, Acta Metall. 21, 61 (1973).
S. Steeb and R. Keppeler, Z. Naturforsch. 24a, 1601 (1969).
C. Wagner, J. Electrochem. Soc. 103, 571 (1956).
R. A. Rapp, A. Ezis, and G. J. Yurek, Metall. Trans. 4, 1283 (1973).
J. B. Clark and F. N. Rhines, Trans. ASM 51, 199 (1959).
T. Sands, V. G. Keramidas, K. M. Yu, J. Washburn, and K. Krishnan, J. Appl. Phys. 62, 2070 (1987).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Schulz, K.J., Zheng, XY. & Chang, Y.A. Interfacial reactions in the Nb/GaAs system. Journal of Materials Research 4, 1462–1472 (1989). https://doi.org/10.1557/JMR.1989.1462
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1557/JMR.1989.1462