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Realizing a stable magnetic double-well potential on an atom chip

  • Integrated Atom Optics and Interferometry
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Abstract.

We discuss design considerations and the realization of a magnetic double-well potential on an atom chip using current-carrying wires. Stability requirements for the trap** potential lead to a typical size of order microns for such a device. We also present experiments using the device to manipulate cold, trapped atoms.

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Authors and Affiliations

  1. Laboratoire Charles Fabry de l’Institut d’Optique, UMR 8501 du CNRS, 91403, Orsay Cedex, France

    J. Estève, T. Schumm, J.-B. Trebbia, I. Bouchoule, A. Aspect & C. I. Westbrook

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  1. J. Estève
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  2. T. Schumm
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  3. J.-B. Trebbia
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  4. I. Bouchoule
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  5. A. Aspect
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  6. C. I. Westbrook
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Correspondence to J. Estève.

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Estève, J., Schumm, T., Trebbia, JB. et al. Realizing a stable magnetic double-well potential on an atom chip. Eur. Phys. J. D 35, 141–146 (2005). https://doi.org/10.1140/epjd/e2005-00190-9

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  • DOI: https://doi.org/10.1140/epjd/e2005-00190-9

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