Abstract
The influence of the thickness of the barrier layer of a nitride heterostructure on the characteristics of field-effect transistors with high electron mobility (high electron mobility transistors, HEMTs) is considered. Reducing the thickness of the barrier layer will increase the transconductance of the transistor, its operating frequencies, gain, and specific output power. This paper considers the change in the thickness of the barrier layer of the heterostructure due to gate recession. The developed and implemented method of low-energy defect-free dry etching of the AlGaN barrier layer is used, which consists in the cyclic repetition of operations of the plasma-chemical oxidation of AlGaN and removal of the formed oxide layer by reactive-ion etching in inductively coupled plasma in a chlorine-containing medium. For the first time, AlGaN/AlN/GaN HEMTs with a gate recess are fabricated using the proposed etching method. In this case, the current values of the obtained transistors do not depend on the number of etching cycles, the position of the operating point along the gate is shifted towards positive voltages (up to transistors operating in the enrichment mode).
REFERENCES
V. G. Mokerov, A. L. Kuznetsov, Yu. V. Fedorov, A. S. Bugaev, A. Yu. Pavlov, E. N. Enyushkina, D. L. Gnatyuk, A. V. Zuev, R. R. Galiev, E. N. Ovcharenko, Yu. N. Sveshnikov, A. F. Tsatsulnikov, and V. M. Ustinov, “AlGaN/GaN-HEMTs with a breakdown voltage higher than 100 V and maximum oscillation frequency fmax as high as 100 GHz,” Semicond. 43, 537–543 (2009).
Yu. V. Fedorov, D. L. Gnatyuk, A. S. Bugaev, O. S. Matveenko, R. R. Galiev, A. V. Zuev, and S. V. Mikhailovich, “Designing gallium nitride-based monolithic microwave integrated circuits for the Ka, V, and W bands,” Russ. Microelectron. 45, 128–136 (2016).
S. V. Mikhajlovich and Yu. V. Fedorov, “Effect of the thickness of barrier layer of nanoheterostructures and the gate-drain capacity on the UHF and noise characteristics of field transistors with high mobility of electrons on the basis of AlGaN/GaN,” Izv. VUZov Radiofiz. 59, 171 (2016).
Yu. V. Fedorov and S. V. Mikhaylovich, “Prospects for substitution of arsenide MIS with nitride elements,” Nano- i Mikrosistemnaya Tekh. 18, 217–226 (2016).
R. R. Galiev, D. L. Gnatyuk, A. V. Zuev, D. V. Krapuhin, M. V. Majtama, O. S. Matveenko, S. V. Mikhajlovich, Yu. V. Fedorov, and M. Yu. Shcherbakova, “Nitride technologies for use in the millimeter wavelength range,” Nano- i Mikrosistemnaya Tekh., No. 2, 21–32 (2015).
A. Yu. Pavlov, V. Yu. Pavlov, D. N. Slapovskiy, S. S. Arutyunyan, Yu. V. Fedorov, and P. P. Mal’tsev, “Nonalloyed ohmic contacts for high-electron-mobility transistors based on AlGaN/GaN heterostructures,” Russ. Microelectron. 46, 340–347 (2017).
G. H. Jessen, R. C. Fitch, J. K. Gillespie, G. Via, A. Crespo, D. Langley, D. J. Denninghoff, M. Trejo, and E. R. Heller, “Short channel effect limitations on high-frequency operation of AlGaN/GaN HEMTs for T-gate devices,” IEEE Trans. Electron Devices 54, 2589–2597 (2007).
K. Shinohara, D. C. Regan, Y. Tang, A. Corrion, D. F. Brown, J. Wong, J. F. Robinson, H. Fung, A. Schmitz, T. Oh, S. Kim, P. Chen, R. Nagele, A. Margomenos, and M. Micovic, “Scaling of GaN HEMTs and Schottky diodes for submillimeter-wave MMIC applications,” IEEE Trans. Electron Devices 60, 2982–2996 (2013).
A. Yu. Pavlov, “Technology of manufacturing of transistors with depletion and enrichment of the channel on the basis of gallium nitride,” Elektron. Tekh., Ser. 3: Mikroelektronika, No. 2, 64–71 (2019).
A. Yu. Pavlov, S. A. Gamkrelidze, K. N. Tomosh, Yu. V. Fedorov, V. Yu. Pavlov, R. R. Galiev, and P. P. Mal’tsev, “Technology of manufacturing mutually complementing transistors on the basis of gallium nitride,” Problemy Razrabotki Perspektivnyh Mikro- Nanoelektronnyh Sistem (MES), No. 3, 69–74 (2018).
S. V. Mikhailovich, A. Yu. Pavlov, K. N. Tomosh, and Yu. V. Fedorov, “Low-energy defectless dry etching of the AlGaN/AlN/GaN HEMT barrier layer”, Tech. Phys. Lett. 44, 435–437 (2018).
A. Chakroun, A. Jaouad, M. Bouchilaoun, O. Arenas, A. Soltani, and H. Maher, “Normally-off AlGaN/GaN MOSHEMT using ultra-thin Al0.45Ga0.55N barrier layer,” Physica Status Solidi A 214, 1600836 (2017).
A. Yu. Pavlov, S. V. Mikhajlovich, K. N. Tomosh, and Yu. V. Fedorov, “Method of dry etching of nitride layers,” RF Patent No. 2694164, Byull. Izobret., No. 19 (2018).
K. N. Tomosh, A. Yu. Pavlov, V. Yu. Pavlov, R. A. Khabibullin, S. S. Arutyunyan, and P. P. Mal-tsev, “Investigation of the fabrication processes of AlGaN/AlN/GaN HEMTs with in situ Si3N4 passivation,” Semicond. 50, 1416–1420 (2016).
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Translated by V. Selikhanovich
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Pavlov, A.Y., Tomosh, K.N., Pavlov, V.Y. et al. Field-Effect Transistors with High Electron Mobility on an AlGaN/GaN Heterostructure with Gate Recessing into the Barrier Layer. Nanotechnol Russia 17 (Suppl 1), S45–S49 (2022). https://doi.org/10.1134/S2635167622070151
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DOI: https://doi.org/10.1134/S2635167622070151