Abstract
The influence of integrated resistors formed under irradiation in a nanowire on its superconducting transitions has been investigated. Niobium nitride nanowires with widths of 75–20 000 nm fabricated from a 5-nm-thick NbN film on single-crystal silicon substrates coated with a 0.3-μm-thick thermal silicon oxide layer and on sapphire substrates have been considered. The influence of a built-in resistive region on the critical current of transition from the superconducting to normal state is described.
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Funding
This study was supported by the National Research Center “Kurchatov Institute” order no. 1359, June 25, 2019.
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Translated by A. Sin’kov
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Gurovich, B.A., Prikhod’ko, K.E., Goncharov, B.V. et al. The Influence of Integrated Resistors Formed under Ion Irradiation on the Superconducting Transitions of Niobium Nitride Nanoconductors. Tech. Phys. 65, 1777–1779 (2020). https://doi.org/10.1134/S1063784220110146
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DOI: https://doi.org/10.1134/S1063784220110146