Abstract
The electronic structure of the clean AlN surface and the ultrathin K/AIN interface has been studied in situ by synchrotron-based photoelectron spectroscopy using the photon energies in the range of 100–650 eV The effect of K adsorption was studied. Changes in the valence band and in the Al 2p, N 1s, and K 3p core levels spectra have been investigated using K submonolayer deposition. Modification of the surface electronic structure of the AlN caused by K adsorption is found to originate from the local interaction of N surface atoms and K adatoms. As a results the suppression of intrinsic surface state and appearance of a new induced state are observed. It was found the K-induced electron redistribution effect that causes the positive energy shift of N 1s surface peak and increasing N-ionicity.
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All data generated or analyzed during this study are included in this published article and are available from the corresponding author on reasonable request.
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ACKNOWLEDGMENTS
The authors thank Synchrotron BESSY II and Russian- German Beamline, Synchrotron BESSY II, Helmholtz Zentrum, Berlin for providing the facilities to perform the experiments and for help during experiments. The authors thank M.N. Lapushkin and P.A. Dementev for help in the preparation of the experiments.
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Benemanskaya, G.V., Timoshnev, S.N., Iluridze, G.N. et al. Synchrotron Radiation Photoemission Study of the Electronic Structure of the Ultrathin K/AIN Interface. Semiconductors 57, 451–453 (2023). https://doi.org/10.1134/S1063782623090051
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DOI: https://doi.org/10.1134/S1063782623090051