Abstract
A quantitative model of the size effect, i.e., the dependence of surface states on the gate size, in metal—oxide—semiconductor (MOS) structures subjected to ionizing irradiation is developed. It is assumed that the size effect is induced by the escape of hydrogen released from hydrogen-containing hole traps through the ends of a two-dimensional MOS structure. The effect is described by a system of diffusion–kinetic equations solved together with the Poisson equation. The influence of processing treatments and thermal-oxidation modes on the magnitude of the effect is associated with different concentrations of hydrogen-containing traps in the gate oxide. It is shown that the main contribution to the effect is introduced by the diffusion of neutral hydrogen atoms accelerated by ionizing irradiation.
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Translated by V. Bukhanov
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Aleksandrov, O.V. On the Size Effect in MOS Structures under Ionizing Irradiation. Semiconductors 56, 241–245 (2022). https://doi.org/10.1134/S1063782622040017
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DOI: https://doi.org/10.1134/S1063782622040017