On the Lateral Recrystallization of Amorphous Silicon Nanostructures Using Nickel Silicide

Abstract

The method of metal-induced lateral recrystallization is an urgent research task for manufacturing integrated circuits of multilevel architecture, sensitive elements of sensors, as well as electronic microsystems and nanosystems. An optimized method of metal-induced lateral crystallization (MILC) of amorphous-silicon nanowire structures using nickel silicide is presented. On the basis of this method, nanowire n-channel field-effect gate-all-around (GAA) MILC transistors are manufactured. Similar structures are manufactured on the basis of single-crystal silicon using SOI (SIMOX) substrates, i.e., SOI GAA transistors. A comparative analysis of the electrical characteristics of field-effect nanowire GAA transistors based on recrystallized and single-crystal silicon is carried out. It is shown that the electrical characteristics of nanowire MILC GAA transistors are comparable to those of nanowire SOI GAA transistors. Thus, the measured electron mobility in weak fields amounts to 130 cm²/(V s) for the MILC GAA transistor and 200 cm²/(V s) for the SOI GAA transistor.