Log in

Features of ZnS-powder do** with a Mn impurity during synthesis and subsequent annealing

  • Fabrication, Treatment, and Testing of Materials and Structures
  • Published:
Semiconductors Aims and scope Submit manuscript

Abstract

Luminescence, electron spin resonance, and X-ray diffraction (XRD) methods were used to investigate the features of ZnS-powder doped by Mn impurity during self-propagating high-temperature synthesis and subsequent annealing. The obtained powder consists of ZnS microcrystals with mainly hexagonal phase (80 ± 5)%. It was found, that after synthesis Mn presents not only in the form of non-uniformly distributed microscopic impurities in ZnS, but also in the form of Mn metal nanocrystals. Thermal annealing at 800°C leads to the additional do** of ZnS from metallic Mn, to the redistribution of the embedded Mn in the volume of microcrystals, and to the ZnS oxidation. At the same time, the ratio between the cubic and hexagonal phases does not change. It was shown that annealing causes a decrease in the concentration of the defects responsible for the luminescence-excitation bands, which correspond to transitions from the ground to the excited states of the Mn2+ ion. As a result of annealing, there is also a change in XRD coherent domain size. Simultaneously, the intensity of peaks in the luminescence-excitation spectrum with wavelengths of 375 and 395 nm was changed. The causes of these changes and the nature of the corresponding bands are discussed.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Subscribe and save

Springer+ Basic
EUR 32.99 /Month
  • Get 10 units per month
  • Download Article/Chapter or Ebook
  • 1 Unit = 1 Article or 1 Chapter
  • Cancel anytime
Subscribe now

Buy Now

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Similar content being viewed by others

References

  1. L. A Gromov, and V. A. Trofimov, Zh. Fiz. Khim. 55, 2629 (1981).

    Google Scholar 

  2. N. K. Morozova, D. A. Mideros, V. G. Galstyan, and E. M. Gavrishchuk, Sov. Phys. Semicond. 42, 1023 (2008).

    Article  Google Scholar 

  3. A. M. Gurvich, Introduction to the Physical Chemistry of Crystal Phosphors (Vyssh. Shkola, Moscow, 1971) [in Russian].

    Google Scholar 

  4. Y. V. Vorobiev, S. J. Sandoval, J. G. Hernandez, S. V. Kozitsky, R. V. Zakharchenko, and V. N. Zakharchenko, Superficies Vacio 8, 37 (1999).

    Google Scholar 

  5. M. K. Samokhvalov and R. R. Davydov, Tech. Phys. Lett. 28, 1049 (2002).

    Article  ADS  Google Scholar 

  6. I. E. Molodetskaya, S. V. Kozitskii, and D. D. Polishchuk, Izv. AN SSSR, Neorg. Mater. 27, 1142 (1991).

    Google Scholar 

  7. Yu. V. Vorob’ev, V. N. Zakharchenko, and S. V. Kozitskii, Kvant. Elektron. (Kiev) 4, 73 (1995).

    Google Scholar 

  8. S. V. Kozytckyy, V. P. Pysarskyy, and D. D. Polishchuk, Phys. Chem. Solid State 4, 749 (2003).

    Google Scholar 

  9. Yu. Yu. Bacherikov, I. S. Golovina, N. V. Kitsyuk, M. A. Mukhlyo, V. E. Rodionov, and A. A. Stadnik, J. Func. Mater. 11, 343 (2004).

    Google Scholar 

  10. N. D. Borisenko, M. F. Bulanyi, F. F. Kodzhespirov, and B. A. Polezhaev, Zh. Prikl. Spektrosk. 55, 452 (1991).

    Google Scholar 

  11. M. F. Bulanyi, B. A. Polezhaev, T. A. Prokof’ev, and I. M. Chernenko, J. Appl. Spectrosc. 67, 282 (2000).

    Article  ADS  Google Scholar 

  12. N. D. Borisenko and B. A. Polezhaev, Zh. Prikl. Spektrosk. 53, 1020 (1990).

    Google Scholar 

  13. N. D. Borisenko, V. I. Klimenko, and B. A. Polezhaev, Zh. Prikl. Spektrosk. 50, 475 (1989).

    Google Scholar 

  14. W. Busse, H. Gumlish, R. O. Tornqvist, and V. Tanninen, Phys. Status. Solidi A 76, 553 (1983).

    Article  ADS  Google Scholar 

  15. M. F. Bulanyi, A. A. Gorban’, A. V. Kovalenko, B. A. Polezhaev, and T. A. Prokof’ev, Izv. Vyssh. Uchebn. Zaved., Fiz. 12, 66 (2002).

    Google Scholar 

  16. W. Busse, H.-E. Gumlich, A. Geoffroy, and R. Parrot, Phys. Status Solidi B 93, 591 (1979).

    Article  ADS  Google Scholar 

  17. N. Karar, F. Singh, and B. R. Mehta, J. Appl. Phys. 95, 656 (2004).

    Article  ADS  Google Scholar 

  18. N. P. Golubeva and M. V. Fok, Zh. Prikl. Spektrosk. 17, 261 (1972).

    Google Scholar 

  19. V. F. Tunitskaya, T. F. Filina, E. I. Panasyuk, and Z. P. Ilyukhina, Zh. Prikl. Spektrosk. 14, 239 (1971).

    Google Scholar 

  20. Physics and Chemistry of II–VI Compounds, Ed. by M. Aven and J. S. Prener (North-Holland, Amsterdam, 1967; Mir, Moscow, 1970).

    Google Scholar 

  21. T. V. Butkhuzi, A. N. Georgobiani, E. Zada-Uly, B. T. El’tazarov, and T. G. Khulordava, Trudy Fiz. Inst. AN 182, 140 (1987).

    Google Scholar 

  22. N. K. Morozova, D. A. Mideros, and N. D. Danilevich, Semiconductors 43, 162 (2009).

    Article  ADS  Google Scholar 

  23. N. K. Morozova, D. A. Mideros, E. M. Gavrishchuk, and V. G. Galstyan, Fiz. Tekh. Poluprovodn. 42, 131 (2008) [Sov. Phys. Semicond. 42, 131 (2008)].

    Google Scholar 

  24. V. F. Agekyan, Phys. Solid State 44, 2013 (2002).

    Article  ADS  Google Scholar 

  25. Y. T. Nien, I. G. Chen, C. S. Hwang, and S. Y. Chu, J. Electroceram. 17, 299 (2006).

    Article  Google Scholar 

  26. T. H. Yeom, Y. H. Lee, T. S. Hahn, and M. H. Oh, J. Appl. Phys. 79, 1004 (1996).

    Article  ADS  Google Scholar 

  27. M. Yu. Gutkin and N. K. Dynkin, Phys. Solid State 54, 798 (2012).

    Article  ADS  Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Corresponding author

Correspondence to N. E. Korsunska.

Additional information

Original Russian Text © N.E. Korsunska, Yu.Yu. Bacherikov, T.R. Stara, V.P. Kladko, N.P. Baran, Yu.O. Polishchuk, A.V. Kuchuk, A.G. Zhuk, Ye.F. Venger, 2013, published in Fizika i Tekhnika Poluprovodnikov, 2013, Vol. 47, No. 5, pp. 702–709.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Korsunska, N.E., Bacherikov, Y.Y., Stara, T.R. et al. Features of ZnS-powder do** with a Mn impurity during synthesis and subsequent annealing. Semiconductors 47, 713–720 (2013). https://doi.org/10.1134/S1063782613050138

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1063782613050138

Keywords

Navigation