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Simulation and calculation of the piezoelectric modulus of a lead zirconate-titanate thin film in a test microstructure

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Abstract

Results of simulation of stresses in the test structure of a silicon beam and analytical calculation of piezoelectric modulus d 31 of a lead zirconate-titanate (PZT) thin film arranged in the region of an elastic element are presented. The characteristics of the sensitive element of acceleration are calculated based on a PZT thin film with an inertial mass made of silicon.

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References

  1. P. V. Gres, M. Kh. Akhmetzyanov, and I. B. Lazarev, Resistance of Materials (Vysshaya shkola, Moscow, 2007) [in Russian].

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  2. V. M. Roshchin, V. B. Yakovlev, M. V. Silibin, and M. S. Lovyagina, Izv. Vyssh. Uchebn. Zaved., Élektron., No. 5, 3 (2007).

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Authors and Affiliations

  1. NPK Technological Center, Moscow State Institute of Electronic Engineering, proezd 4806, 5, Zelenograd, Moscow, 124498, Russia

    V. V. Amelichev

  2. Moscow State Institute of Electronic Engineering (Technical University), proezd 4806, 5, Zelenograd, Moscow, 124498, Russia

    D. A. Saikin, V. M. Roshchin & M. V. Silibin

Authors
  1. V. V. Amelichev
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  2. D. A. Saikin
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  3. V. M. Roshchin
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  4. M. V. Silibin
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Corresponding author

Correspondence to V. V. Amelichev.

Additional information

Original Russian Text © V.V. Amelichev, D.A. Saikin, V.M. Roshchin, M.V. Silibin, 2010, published in Izvestiya vysshikh uchebnykh zavedenii. Elektronika.

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Amelichev, V.V., Saikin, D.A., Roshchin, V.M. et al. Simulation and calculation of the piezoelectric modulus of a lead zirconate-titanate thin film in a test microstructure. Semiconductors 44, 1631–1633 (2010). https://doi.org/10.1134/S1063782610130026

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  • DOI: https://doi.org/10.1134/S1063782610130026

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