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Spin Transport in InSb Semiconductors with Different Electron Gas Concentrations

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Abstract

We have investigated the spin-induced voltage in the Hanle effect and the spin polarization factor of electrons in lateral spin devices based on InSb semiconductors with different electron concentrations. It is found that with increasing electron concentration, both the voltage and the polarization factor decrease.

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Funding

This study was performed under the State assignment of the Ministry of Science and Higher Education of the Russian Federation (subject “Spin,” no. AAAA-A18-118020290104-2) and supported in part by the Russian Foundation for Basic Research (project nos. 19-02-00038 and 20-07-00968).

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Authors and Affiliations

  1. Mikheev Institute of Physics, Ural Branch, Russian Academy of Sciences, 620990, Yekaterinburg, Russia

    N. A. Viglin, V. M. Tsvelikhovskaya, T. N. Pavlov & V. V. Proglyado

  2. Kotelnikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 410019, Saratov, Russia

    Yu. V. Nikulin

  3. Chernyshevsky Saratov State University, 410012, Saratov, Russia

    Yu. V. Nikulin

Authors
  1. N. A. Viglin
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  2. Yu. V. Nikulin
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  3. V. M. Tsvelikhovskaya
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  4. T. N. Pavlov
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  5. V. V. Proglyado
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Corresponding author

Correspondence to N. A. Viglin.

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The authors declare that they have no conflicts of interest.

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Translated by N. Wadhwa

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Viglin, N.A., Nikulin, Y.V., Tsvelikhovskaya, V.M. et al. Spin Transport in InSb Semiconductors with Different Electron Gas Concentrations. J. Exp. Theor. Phys. 134, 736–742 (2022). https://doi.org/10.1134/S1063776122050065

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  • DOI: https://doi.org/10.1134/S1063776122050065

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