Abstract
We have investigated the spin-induced voltage in the Hanle effect and the spin polarization factor of electrons in lateral spin devices based on InSb semiconductors with different electron concentrations. It is found that with increasing electron concentration, both the voltage and the polarization factor decrease.
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Funding
This study was performed under the State assignment of the Ministry of Science and Higher Education of the Russian Federation (subject “Spin,” no. AAAA-A18-118020290104-2) and supported in part by the Russian Foundation for Basic Research (project nos. 19-02-00038 and 20-07-00968).
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Viglin, N.A., Nikulin, Y.V., Tsvelikhovskaya, V.M. et al. Spin Transport in InSb Semiconductors with Different Electron Gas Concentrations. J. Exp. Theor. Phys. 134, 736–742 (2022). https://doi.org/10.1134/S1063776122050065
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DOI: https://doi.org/10.1134/S1063776122050065