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Field-Frequency Variation during Plasma-Chemical Deposition of Silicon–Carbon Films as a Method for Their Structural Modification

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Abstract

The influence of the electric-field frequency in the range from 0.1 to 2.0 MHz during the plasma-chemical deposition of diamond-like silicon–carbon films on their chemical composition, structure, and electrical properties is studied. It is shown that the films obtained in the entire studied frequency range have an amorphous structure with a constant, within the measurement accuracy, chemical composition. At the same time, the morphology of the surface of the films and their electrophysical properties significantly depend on the frequency of the electric field during plasma-chemical deposition. This makes it possible to use the change in the field frequency in the preparation of films as a method for controlling their properties. The frequency range providing the most effective modification of the electrophysical properties is determined.

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Funding

The study was supported by the Russian Science Foundation no. 22-29-00864 (https://rscf.ru/project/22-29-00864/).

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Authors and Affiliations

  1. National Research University “Moscow Power Engineering Institute”, 111250, Moscow, Russia

    A. I. Popov, A. D. Barinov, V. M. Yemets & T. S. Chukanova

  2. Institute of Nanotechnology of Microelectronics, Russian Academy of Sciences, 119991, Moscow, Russia

    A. I. Popov & A. D. Barinov

  3. National Research Center “Kurchatov Institute”, 123182, Moscow, Russia

    M. Yu. Presnyakov

Authors
  1. A. I. Popov
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  2. A. D. Barinov
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  3. V. M. Yemets
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  4. M. Yu. Presnyakov
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  5. T. S. Chukanova
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Correspondence to A. I. Popov or A. D. Barinov.

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Popov, A.I., Barinov, A.D., Yemets, V.M. et al. Field-Frequency Variation during Plasma-Chemical Deposition of Silicon–Carbon Films as a Method for Their Structural Modification. J. Surf. Investig. 17, 1060–1064 (2023). https://doi.org/10.1134/S1027451023050300

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  • DOI: https://doi.org/10.1134/S1027451023050300

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