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Numerical study of the DLC film flow field in the ECR-PECVD reaction chamber

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Abstract

This paper mainly investigates the optimum parameters for the fabrication of uniform diamond-like carbon (DLC) films on the electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR-PECVD) reaction chamber by analyzing the effect of the reacting gas velocity on the film properties. This work makes use of computational fluid dynamics (CFD) approach to model surface chemical reactions, flow and temperature fields, as well as heat and mass transfer phenomena. The simulation has shown that natural convection and mass transfer affect the recirculating flow within the reactor and, therefore, the distribution of material deposition. In other words, as a result of attaching an endplate (baffle) at the top of the substrate, the deposition rate of the substrate is appreciably enhanced. However, the surface uniformity of the substrate is obviously deteriorated.

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References

  1. S. Aisenberg and R. Chabot, “Ion-Beam Deposition of Thin Films of Diamondlike Carbon,” J. Appl. Phys. 42, 2953–2958 (1971).

    Article  ADS  Google Scholar 

  2. D. W. Weyburne and B. S. Ahern, “Design and Operating Considerations for a Water-Cooled Close-Spaced Reactant Injector in a Production Scale MOCVD Reactor,” J. Crystal Growth. 170, 77–82 (1997).

    Article  ADS  Google Scholar 

  3. J. Jang, J. H. Moon, E. J. Han, and S. J. Chung, “Advanced PECVD Processes for Highly Electron Emitting Diamond-Like-Carbon,” Thin Solid Films 341, 196–201 (1999).

    Article  ADS  Google Scholar 

  4. A. K. De, K. Muralidhar, V. Eswaran, and V. K. Wadhawan, “Modelling of Transport Phenomena in a Low Pressure CVD Reactor,” J. Crystal Growth 267, 598–612 (2004).

    Article  ADS  Google Scholar 

  5. Y. C. Liu, “Heat and Mass Transfer Modeling for a CVD Process in Anufacturing TFT-LCD,” M.S. Thesis (Nat. Sun Yat-Sen Univ., 2006).

    Google Scholar 

  6. H. Van Santen, C. R. Kleijn, and H. E. A. Van Den Akker, “On Turbulent Flows in Cold-Wall CVD Reactors,” J. Crystal Growth 212, 299–310 (2000).

    Article  ADS  Google Scholar 

  7. H. Van Santen, C. R. Kleijn, and H. E. A. Van Den Akker, “Symmetry Breaking in a Stagnation-Flow CVD Reactor,” J. Crystal Growth 212, 311–323 (2000).

    Article  ADS  Google Scholar 

  8. P. C. Chen, “Raman Spectroscopy Study of Diamond Like Carbon Films by Combining Magnetron Sputtering and ECR-CVD Deposition,” M. S. Thesis (Nat. Cheng Kung Univ., 2002).

    Google Scholar 

  9. R. Malekfar, H. Motahari, J. Rohollahnejad, and F. Sahraiyan, “Raman, Dielectric and Optical Investigations of DLC thin Films,” Surf. Rev. Lett. 16, 731–736 (2009).

    Article  Google Scholar 

  10. D. I. Fotiadis, A. M. Kremer, and K. F. Jensen, “Complex Flow Phenomena in Vertical MOCVD Reactor: Effect on Deposition Uniformity and Interface Abruptness,” J. Crystal Growth 85, 154–164 (1987).

    Article  ADS  Google Scholar 

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Correspondence to F. -L. Lih.

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Original Russian Text © F.-L. Lih, C.-H. Tai, J.-C. Leong.

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Translated from Prikladnaya Mekhanika i Tekhnicheskaya Fizika, Vol. 55, No. 4, pp. 60–73, July–August, 2014.

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Lih, F.L., Tai, C.H. & Leong, J.C. Numerical study of the DLC film flow field in the ECR-PECVD reaction chamber. J Appl Mech Tech Phy 55, 602–613 (2014). https://doi.org/10.1134/S0021894414040075

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  • DOI: https://doi.org/10.1134/S0021894414040075

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