Abstract
We describe a modified two-temperature process for reproducible high-volume (up to 500 g) synthesis of the nonlinear-optical semiconductor ZnGeP2, which enables the preparation of nominally stoichiometric material. The major reaction intermediates in the two-temperature ZnGeP2 synthesis are ZnP2, Zn3P2, GeP, and Ge. Using x-ray diffraction, we refined the interplanar spacings in the tetragonal structure of ZnGeP2 and fcc structure of GeP and indexed peaks missing in the PDF cards 33-1471 (ZnGeP2) and 21-353 (GeP).
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Original Russian Text © G.A. Verozubova, A.I. Gribenyukov, Yu.P. Mironov, 2007, published in Neorganicheskie Materialy, 2007, Vol. 43, No. 10, pp. 1164–1169.
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Verozubova, G.A., Gribenyukov, A.I. & Mironov, Y.P. Two-temperature synthesis of ZnGeP2 . Inorg Mater 43, 1040–1045 (2007). https://doi.org/10.1134/S0020168507100020
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DOI: https://doi.org/10.1134/S0020168507100020