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Characterisation of Interface-Engineered Ramp-Edge Josephson Junctions by Transmission Electron Microscopy

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Abstract

Interface-engineered ramp-edge junctions (IEJ) have been characterised by high-resolution transmission electron microscopy, X-ray analysis and electron energy loss spectroscopy. The IEJ are prepared by plasma etching an ion-milled YBa 2 Cu 3 O 7-δ (YBCO) ramp-edge and subsequently a top YBCO layer is deposited. The results show that the YBCO at the plasma-etched interface has a modified structure. The modified barrier structure has a pseudo cubic unit cell which is rotated 45° around the [001] axis with respect to the underlying YBCO.

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Authors and Affiliations

  1. Experimental Physics, Chalmers Univ. of Tech., 412 96, Göteborg, Sweden

    M. Gustafsson, E. Olsson & B. Moeckly

  2. Analytical Materials Physics, The Ångstrom Laboratory, Uppsala University, Box 534, 751 21, Uppsala, Sweden

    E. Olsson

  3. Conductus Inc., 969 West Maude Ave., Sunnyvale, CA, 94086, USA

    B. Moeckly

Authors
  1. M. Gustafsson
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  2. E. Olsson
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  3. B. Moeckly
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Gustafsson, M., Olsson, E. & Moeckly, B. Characterisation of Interface-Engineered Ramp-Edge Josephson Junctions by Transmission Electron Microscopy. Journal of Low Temperature Physics 117, 581–585 (1999). https://doi.org/10.1023/A:1022543800427

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