Abstract
Complex impedance spectroscopy was used for the investigation of MIS gate-stack structures with barium strontium titanate. Using a spectroscopic plot of the imaginary part of the impedance versus frequency, the different capacitive components of the MIS structure were evaluated. The BSTO relative dielectric constant εr was determined from the capacitive components.
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Ivanova, K., Vitanov, P., Harizanova, A. et al. Application of impedance spectroscopy for the investigation of MIS structures with barium strontium titanate. Journal of Materials Science: Materials in Electronics 14, 803–804 (2003). https://doi.org/10.1023/A:1026117607489
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DOI: https://doi.org/10.1023/A:1026117607489