Finite-depth and intrinsic losses in vertically etched two-dimensional photonic crystals

Abstract

We address the issue of out-of-plane losses in two-dimensional (2D) photonic crystals (PC) etched through a GaAs monomode waveguide clad with standard GaAlAs alloys. We correlate experimental transmission of PCs with two kinds of loss simulation results. The first kind is 2D and introduces an ad hoc imaginary index in the air holes to account for the losses [see (Benisty et al. Appl. Phys. Lett. 76, 532, 2000)]. The second kind is a novel exact three-dimensional calculation inspired by grating-Fourier analysis that provides quantitatively unprecedented agreement with experimental measurements taking into account hole depth as a limiting parameter. We conclude that, in revision to the conclusions of the above reference, the experimental losses are not the intrinsic ones, being larger by a factor of 5 to 10 due to insufficient hole depth. The transition occurs at a critical etch depth shown to be here around 700 nm. We thus predict, for holes deeper than 700 nm, much improved crystals with very low transmission losses and microresonators with ultra-high quality factors.