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β-NMR in II–VI semiconductors

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Abstract

β-active probe nuclei are implanted in nominally undoped ZnSe crystals. β-radiation detected nuclear magnetic resonance (β-NMR) studies are described for two different probe nuclei, 8Li and 12B. This way, the implantation behavior of two “opposite”dopants, one acceptor (Li) and one donor (B) can be characterized by the same microscopic technique. Such characterizations are attempted in terms of the structure of intermediate or final lattice sites, defect charge states, or the kinetics of defect reactions and site changes.

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Authors and Affiliations

  1. Fachbereich Physik der Philipps-Universität Marburg, D-35032, Marburg, Germany

    B. Ittermann, M. Füllgrabe, M. Heemeier, F. Kroll, F. Mai, K. Marbach, P. Meier, D. Peters & G. Welker

  2. Institut für Physik, Johannes-Gutenberg Universität Mainz, D-55099, Mainz, Germany

    W. Geithner, S. Kappertz, S. Wilbert & R. Neugart

  3. Departement Natuurkunde, Katholieke Universiteit Leuven, B-3001, Leuven, Belgium

    P. Lievens

  4. PPE Division, CERN, CH-1211, Geneva 23, Switzerland

    U. Georg & M. Keim

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  1. B. Ittermann
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  2. M. Füllgrabe
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Ittermann, B., Füllgrabe, M., Heemeier, M. et al. β-NMR in II–VI semiconductors. Hyperfine Interactions 129, 423–441 (2000). https://doi.org/10.1023/A:1012634505329

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