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Anomalous Resistivity in Vanadium-Doped Semi-Insulating 4H-SiC Wafers

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Acta Metallurgica Sinica (English Letters) Aims and scope

Abstract

The resistivities of vanadium-doped semi-insulating 4H-SiC wafers were measured by a contactless resistivity measurement system. Anomalous resistivity was found in semi-insulating 4H-SiC wafer. Raman spectra of semi-insulating 4H-SiC wafer indicated that the anomalous resistivity was caused by polytype inclusion. Based on the activation energies of different SiC polytypes calculated from resistivity versus temperature data measured by COREMA-VT, the resistivities in the vanadium-doped semi-insulating 4H-SiC wafer with 6H polytype inclusion were calculated. The calculated resistivities are quite consistent with the measured resistivities. Furthermore, the compensation mechanism for the formation of anomalous resistivity was proposed.

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Acknowledgments

This work was financially supported by National Basic Research Program of China (No. 2011CB301904) and the Natural Science Foundation of China (Nos. 11134006 and 61327808).

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Authors and Affiliations

  1. State Key Laboratory of Crystal Materials, Shandong University, **an, 250100, China

    **anglong Yang, Kun Yang, Yingxin Cui, Yan Peng, **ufang Chen, Xuejian **e, **aobo Hu & **angang Xu

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  1. **anglong Yang
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  2. Kun Yang
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  3. Yingxin Cui
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  4. Yan Peng
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  5. **ufang Chen
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  6. Xuejian **e
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  7. **aobo Hu
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  8. **angang Xu
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Correspondence to **aobo Hu or **angang Xu.

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Available online at http://springer.longhoe.net/journal/40195

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Yang, X., Yang, K., Cui, Y. et al. Anomalous Resistivity in Vanadium-Doped Semi-Insulating 4H-SiC Wafers. Acta Metall. Sin. (Engl. Lett.) 27, 1083–1087 (2014). https://doi.org/10.1007/s40195-014-0129-0

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  • DOI: https://doi.org/10.1007/s40195-014-0129-0

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