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Asymmetric Joule heating effect on a monolayer MoS2 device measured by a thermal imaging microscope

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Abstract

Layered transition-metal dichalcogenides (TMDs) materials, which currently provide the most ideal two-dimensional (2D) semiconductor channels, have limited performance due to unavoidable interfacial defects caused by bottom–up processes. These defects act as carrier scattering sources in a 2D channel, causing Joule heat losses. We investigated Joule heating effects on CVD grown monolayer MoS2 field-effect transistors (FETs) by measuring thermal characteristics according to minute voltage conditions using an infrared (IR) thermal microscope and analyzed it based on the 3D heat transfer simulation. We confirmed that the temperature distribution is non-uniform and maximum temperature of the channel increases due to the asymmetry of the charge distribution when the transistor operated in the saturation mode. The maximum temperature as a function of input power density initially shows the linear relationship and gradually becomes more non-linear as input power increases, and the non-linearity becomes more pronounced at the negative drain-source bias conditions. Our results demonstrate the importance of charge distribution during device operation as well as total input power in thermal analysis studies based on 2D materials.

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References

  1. X. Xu, C. Liu, Z. Sun, T. Cao, Z. Zhang, E. Wang, Z. Liu, K. Liu, Chem. Soc. Rev. 47, 3059–3099 (2018)

    Article  Google Scholar 

  2. J.-Y. Xu, J.-S. Yu, J.-H. Liao, X.-B. Yang, C.-Y. Wu, Y. Wang, L. Wang, C. **e, L.-B. Luo, ACS Appl. Mater. Interfaces. 11, 21702–21710 (2019)

    Article  Google Scholar 

  3. Y. Zhang, T.-T. Tang, C. Girit, Z. Hao, M.C. Martin, A. Zettl, M.F. Crommie, Y.R. Shen, F. Wang, Nature 459, 820–823 (2009)

    Article  ADS  Google Scholar 

  4. J.-K. Lee, S. Yamazaki, H. Yun, J. Park, G.P. Kennedy, G.-T. Kim, O. Pietzsch, R. Wiesendanger, S. Lee, S. Hong, U. Dettlaff-Weglikowska, S. Roth, Nano Lett. 13, 3494–3500 (2013)

    Article  ADS  Google Scholar 

  5. J. Bai, X. Zhong, S. Jiang, Y. Huang, X. Duan, Nat. Nanotechnol. 5, 190–194 (2010)

    Article  ADS  Google Scholar 

  6. S.Y. Zhou, G.H. Gweon, A.V. Fedorov, P.N. First, W.A. de Heer, D.H. Lee, F. Guinea, A.H. Castro Neto, A. Lanzara, Nat. Mater. 6, 770–775 (2007)

    Article  ADS  Google Scholar 

  7. B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, A. Kis, Nat. Nanotechnol. 6, 147–150 (2011)

    Article  ADS  Google Scholar 

  8. S. Fathipour, N. Ma, W.S. Hwang, V. Protasenko, S. Vishwanath, H.G. **ng, H. Xu, D. Jena, J. Appenzeller, A. Seabaugh, Appl. Phys. Lett. 105, 192101 (2014)

    Article  ADS  Google Scholar 

  9. D. Jariwala, V.K. Sangwan, L.J. Lauhon, T.J. Marks, M.C. Hersam, ACS Nano 8, 1102–1120 (2014)

    Article  Google Scholar 

  10. K.-A.N. Duerloo, M.T. Ong, E.J. Reed, J. Phys. Chem. Lett. 3, 2871–2876 (2012)

    Article  Google Scholar 

  11. R. Peng, Y. Ma, Q. Wu, B. Huang, Y. Dai, Nanoscale 11, 11413–11428 (2019)

    Article  Google Scholar 

  12. D. Rhodes, S.H. Chae, R. Ribeiro-Palau, J. Hone, Nat. Mater. 18, 541–549 (2019)

    Article  ADS  Google Scholar 

  13. Y.-F. Lin, Y. Xu, S.-T. Wang, S.-L. Li, M. Yamamoto, A. Aparecido-Ferreira, W. Li, H. Sun, S. Nakaharai, W.-B. Jian, K. Ueno, K. Tsukagoshi, Adv. Mater. 26, 3263–3269 (2014)

    Article  Google Scholar 

  14. S. Lee, Z. Zhong, Nanoscale 6, 13283–13300 (2014)

    Article  ADS  Google Scholar 

  15. J.F. Gonzalez-Marin, D. Unuchek, K. Watanabe, T. Taniguchi, A. Kis, NPJ 2D Mater. Appl. 3, 14 (2019)

    Article  Google Scholar 

  16. M. Tosun, S. Chuang, H. Fang, A.B. Sachid, M. Hettick, Y. Lin, Y. Zeng, A. Javey, ACS Nano 8, 4948–4953 (2014)

    Article  Google Scholar 

  17. S.A. Svatek, C. Bueno-Blanco, D.-Y. Lin, J. Kerfoot, C. Macías, M.H. Zehender, I. Tobías, P. García-Linares, T. Taniguchi, K. Watanabe, P. Beton, E. Antolín, Nano Energy 79, 105427 (2021)

    Article  Google Scholar 

  18. T. Kawanago, W. Du, R. Ikoma, T. Oba, H. Takagi, S. Oda, Transfer printing of nanostructured membrane with elastomeric stamp and its application to TMDC-based field-effect transistors, in 2017 17th international workshop on junction technology (IWJT), pp. 40–43 (2017)

  19. H.G. Ji, P. Solís-Fernández, D. Yoshimura, M. Maruyama, T. Endo, Y. Miyata, S. Okada, H. Ago, Adv. Mater. 31, 1903613 (2019)

    Article  Google Scholar 

  20. Y.Y. Illarionov, G. Rzepa, M. Waltl, T. Knobloch, A. Grill, M.M. Furchi, T. Mueller, T. Grasser, 2D Materials 3, 035004 (2016)

    Article  Google Scholar 

  21. J. Roh, I.-T. Cho, H. Shin, G. Woo Baek, B. Hee Hong, J.-H. Lee, S. Hun **, C. Lee, Nanotechnology 26, 455201 (2015)

    Article  Google Scholar 

  22. S. Wi, M. Chen, D. Li, H. Nam, E. Meyhofer, X. Liang, Appl. Phys. Lett. 107, 062102 (2015)

    Article  ADS  Google Scholar 

  23. M.-H. Bae, Z.-Y. Ong, D. Estrada, E. Pop, Nano Lett. 10, 4787–4793 (2010)

    Article  ADS  Google Scholar 

  24. M.-H. Bae, S. Islam, V.E. Dorgan, E. Pop, ACS Nano 5, 7936–7944 (2011)

    Article  Google Scholar 

  25. E. Yalon, C.J. McClellan, K.K.H. Smithe, M. Muñoz Rojo, R.L. Xu, S.V. Suryavanshi, A.J. Gabourie, C.M. Neumann, F. **ong, A.B. Farimani, E. Pop, Nano Lett. 17, 3429–3433 (2017)

    Article  ADS  Google Scholar 

  26. D. Lembke, A. Kis, ACS Nano 6, 10070–10075 (2012)

    Article  Google Scholar 

  27. M.J. Mleczko, R.L. Xu, K. Okabe, H.-H. Kuo, I.R. Fisher, H.S.P. Wong, Y. Nishi, E. Pop, ACS Nano 10, 7507–7514 (2016)

    Article  Google Scholar 

  28. K.K.H. Smithe, C.D. English, S.V. Suryavanshi, E. Pop, Nano Lett. 18, 4516–4522 (2018)

    Article  ADS  Google Scholar 

  29. C. Kim, S. Issarapanacheewin, I. Moon, K.Y. Lee, C. Ra, S. Lee, Z. Yang, W.J. Yoo, Adv. Electron. Mater. 6, 1900964 (2020)

    Article  Google Scholar 

  30. N. Killat, M. Kuball, T.M. Chou, U. Chowdhury, J.L. Jimenez, 2010 IEEE international reliability physics symposium, pp. 528–531 (2010)

  31. T. Batten, A. Manoi, M.J. Uren, T. Martin, M. Kuball, J. Appl. Phys. 107, 074502 (2010)

    Article  ADS  Google Scholar 

  32. D.G. Cahill, K. Goodson, A. Majumdar, J. Heat Transf. 124, 223–241 (2001)

    Article  Google Scholar 

  33. Y. Lee, S. Park, H. Kim, G.H. Han, Y.H. Lee, J. Kim, Nanoscale 7, 11909–11914 (2015)

    Article  ADS  Google Scholar 

  34. A. Valsaraj, J. Chang, A. Rai, L.F. Register, S.K. Banerjee, 2D Materials 2, 045009 (2015)

    Article  Google Scholar 

  35. H. Fang, M. Tosun, G. Seol, T.C. Chang, K. Takei, J. Guo, A. Javey, Nano Lett. 13, 1991–1995 (2013)

    Article  ADS  Google Scholar 

  36. Y. Du, H. Liu, A.T. Neal, M. Si, D.Y. Peide, IEEE Electron Device Lett. 34, 1328–1330 (2013)

    Article  ADS  Google Scholar 

  37. A. Rai, A. Valsaraj, H.C.P. Movva, A. Roy, R. Ghosh, S. Sonde, S. Kang, J. Chang, T. Trivedi, R. Dey, S. Guchhait, S. Larentis, L.F. Register, E. Tutuc, S.K. Banerjee, Nano Lett. 15, 4329–4336 (2015)

    Article  ADS  Google Scholar 

  38. L. Yang, K. Majumdar, H. Liu, Y. Du, H. Wu, M. Hatzistergos, P. Hung, R. Tieckelmann, W. Tsai, C. Hobbs, Nano Lett. 14, 6275–6280 (2014)

    Article  ADS  Google Scholar 

  39. C.J. McClellan, E. Yalon, K.K.H. Smithe, S.V. Suryavanshi, E. Pop, Effective n-type do** of monolayer MoS2 by AlOx, in 2017 75th annual device research conference (DRC), pp. 1–2 (2017)

  40. A. Leonhardt, D. Chiappe, V.V. Afanas’ev, S. El Kazzi, I. Shlyakhov, T. Conard, A. Franquet, C. Huyghebaert, S. de Gendt, A.C.S. Appl, Mater. Interfaces 11, 42697–42707 (2019)

    Article  Google Scholar 

  41. A. Meersha, B. Sathyajit, M. Shrivastava, A systematic study on the hysteresis behaviour and reliability of MoS2 FET, in 2017 30th international conference on VLSI design and 2017 16th international conference on embedded systems (VLSID), pp. 437–440 (2017)

  42. D.J. Late, B. Liu, H.S.S.R. Matte, V.P. Dravid, C.N.R. Rao, ACS Nano 6, 5635–5641 (2012)

    Article  Google Scholar 

  43. W. Liu, D. Sarkar, J. Kang, W. Cao, K. Banerjee, ACS Nano 9, 7904–7912 (2015)

    Article  Google Scholar 

  44. B. Öner, J.W. Pomeroy, M. Kuball, ACS Appl. Electron. Mater. 2, 93–102 (2020)

    Article  Google Scholar 

  45. A. Sarua, J. Hangfeng, M. Kuball, M.J. Uren, T. Martin, K.P. Hilton, R.S. Balmer, IEEE Trans. Electron Devices 53, 2438–2447 (2006)

    Article  ADS  Google Scholar 

  46. L. Dobusch, S. Schuler, V. Perebeinos, T. Mueller, Adv. Mater. 29, 1701304 (2017)

    Article  Google Scholar 

  47. R. Kitamura, L. Pilon, M. Jonasz, Appl. Opt. 46, 8118–8133 (2007)

    Article  ADS  Google Scholar 

  48. R. Wang, A. Vasiliev, M. Muneeb, A. Malik, S. Sprengel, G. Boehm, M.-C. Amann, I. Šimonytė, A. Vizbaras, K. Vizbaras, R. Baets, G. Roelkens, Sensors 17, 1788 (2017)

    Article  ADS  Google Scholar 

  49. S. Park, A.T. Garcia-Esparza, H. Abroshan, B. Abraham, J. Vinson, A. Gallo, D. Nordlund, J. Park, T.R. Kim, L. Vallez, R. Alonso-Mori, D. Sokaras, X. Zheng, Adv. Sci. 8, 2002768 (2021)

    Article  Google Scholar 

  50. D.M. Sim, M. Kim, S. Yim, M.-J. Choi, J. Choi, S. Yoo, Y.S. Jung, ACS Nano 9, 12115–12123 (2015)

    Article  Google Scholar 

  51. G.P. Neupane, K.P. Dhakal, H. Kim, J. Lee, M.S. Kim, G. Han, Y.H. Lee, J. Kim, J. Appl. Phys. 120, 051702 (2016)

    Article  ADS  Google Scholar 

  52. W.L. Spychalski, M. Pisarek, R. Szoszkiewicz, J. Phys. Chem. C 121, 26027–26033 (2017)

    Article  Google Scholar 

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Acknowledgements

This work was supported by the 2020 Research Fund of the University of Ulsan

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Authors and Affiliations

  1. Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea

    Gwanmu Lee, Sehwan Park & Dongseok Suh

  2. Division of Science Education, Kangwon National University, Chuncheon, 24341, Republic of Korea

    Sung Ju Hong

  3. WIT Co., Ltd., 89, Seoho-ro, Gwonweon-gu, Suwon, 16614, Republic of Korea

    Jaewan Choi

  4. Department of Electrical Engineering, University of Ulsan, Ulsan, 44610, Republic of Korea

    Hyun** Ji

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  1. Gwanmu Lee
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Lee, G., Park, S., Suh, D. et al. Asymmetric Joule heating effect on a monolayer MoS2 device measured by a thermal imaging microscope. J. Korean Phys. Soc. 80, 619–627 (2022). https://doi.org/10.1007/s40042-022-00439-5

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  • DOI: https://doi.org/10.1007/s40042-022-00439-5

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