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Graphene-based modulator using GST-phase change material on semi-ellipsoid slot waveguide configuration

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Abstract

A novel electro-absorption modulator (EAM) operating at the 1550 nm wavelength has been proposed, comprising graphene layers integrated with semi-ellipsoidal hafnium dioxide (HfO2) nanostructures embedded in a silicon dioxide (SiO2) substrate. This unique design offers several key advantages, including polarization-insensitive performance with a polarization sensitivity loss below 0.004 dB, an extended propagation length of 6800 μm, and a wide 3 dB bandwidth of 420.7 GHz. Furthermore, the mode power attenuation can be dynamically adjusted from 563.07 to 12,669.15 dB/m by tuning the graphene's chemical potential, enabling precise control over the extinction ratio, which can be varied from 15 to 23.85 dB/μm. Through meticulous optimization of critical parameters, such as the number of graphene layers, dimensions, germanium-antimony-telluride (GST) thickness between graphene sheets, spacing between HfO2 semi-ellipsoids, and semi-ellipsoid dimensions, the electro-optic switching capabilities of this design have been significantly enhanced. This innovative graphene-hafnia EAM concept offers a low-cost, energy-efficient solution for optical modulation at the 1550 nm wavelength, a crucial requirement for telecommunication and optical computing applications. The reported optimization of the unique geometry and seamless integration of two-dimensional graphene with HfO2 nanostructures represent a major breakthrough in the development of narrowband EAMs, opening up new possibilities for next-generation photonic devices.

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Authors and Affiliations

  1. Department of Photonics, Faculty of Physics, University of Kashan, Kashan, 87317-51167, Iran

    H. Dalvand & H. R. Zangeneh

  2. Department of Electronics, Faculty of Electrical and Computer Engineering, University of Kashan, Kashan, 87317-51167, Iran

    M. Nikoufard

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  1. H. Dalvand
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  2. M. Nikoufard
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  3. H. R. Zangeneh
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Correspondence to M. Nikoufard.

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Dalvand, H., Nikoufard, M. & Zangeneh, H.R. Graphene-based modulator using GST-phase change material on semi-ellipsoid slot waveguide configuration. Indian J Phys (2024). https://doi.org/10.1007/s12648-024-03308-y

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