Abstract
In this paper we proposed a new structure of GaAsP/6H-SiC/GaN Power semiconductor field effect transistor with undoped region under gate. The device is made of semiconductor material i.e. Gallium Nitride (GaN), Silicon Carbide and Gallium Arsenide Phospide and utilized Silvaco TCAD in 10nm technology for the simulation. The length and width of the undoped region is equal to length of channel and this undoped region under the gate will reduce the peak electric field which existed in the channel region. The saturated drain current of proposed structure is about 53% higher than the conventional transistor and subsequently an improvement in other drain current parameters and analog parameters. The performance comparison is mainly in terms of drain current characteristics and analog characteristics such as Gain, transconductance, drain conductance, threshold voltage. As a subsequent improvement of performance parameters, this structure is used at high power and high frequency applications.
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The authors would like thank National institute of Technology Silchar for providing necessary computational tools.
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Author 1 (Balaji B) studied the basic types of MESFET and simulation. Author 2 (K.Srinivasa Rao) analyzed the undoped MESFET and wrote paper. Author 3 (M.Aditya) carried out drain current characteristics. Author 4 (K.Girija Sravani) simulated analog parameters and wrote paper.
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Balaji, B., Rao, K.S., Aditya, M. et al. Device Design, Simulation and Qualitative Analysis of GaAsP/ 6H-SiC/ GaN Metal Semiconductor Field Effect Transistor. Silicon 14, 8449–8454 (2022). https://doi.org/10.1007/s12633-022-01665-z
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DOI: https://doi.org/10.1007/s12633-022-01665-z