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MgO intercalation and crystallization between epitaxial graphene and Ru(0001)

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摘要

在绝缘基底上制备石墨烯是其在电子学领域实现广泛应用的关键。但是, 直接在介电基底上生长的石墨烯, 存在尺寸和质量方面的限制, 而通过转移石墨烯到绝缘基底上的方法又不适用于大面积工业应用。这篇文章中, 我们报道了一种在大面积、高质量、单层石墨烯与金属单晶基底之间实现晶态氧化镁介电插层的方法。镁和氧分步插层在石墨烯/Ru(0001)的界面处, 在高温下形成晶态氧化镁。石墨烯/氧化镁/Ru(0001)样品用低能电子衍射(LEED)、扫描隧道显微镜(STM)、X射线光电子能谱(XPS)和扫描透射电子显微镜(STEM)进行了表征。LEED衍射图案给出了晶态氧化镁的结构, STM证明了顶层的石墨烯依旧完整。氧化镁插层样品的STEM表征证明插入层的厚度可达2.3 nm, 而且晶态氧化镁的结构为岩盐结构的氧化镁, 其面外取向为[001]。这一工作提供了一种在高介电常数绝缘体上制备石墨烯的新途径, 在未来的电子学中可能具有潜在的应用。

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Acknowledgements

This study was financially supported by the National Key Research & Development Program of China (Nos. 2019YFA0308500, 2018YFA0305800 and 2016YFA0202300), the National Natural Science Foundation of China (Nos. 61888102 and 61925111), the Strategic Priority Research Program of Chinese Academy of Sciences (Nos. XDB30000000 and XDB28000000), and the CAS Key Laboratory of Vacuum Physics.

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Authors and Affiliations

  1. Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Bei**g, 100190, China

    Xue-Yan Wang, Hui Guo, **-An Shi, Yi Biao, Yan Li, Guang-Yuan Han, Shuai Zhang, Kai Qian, Wu Zhou, **ao Lin, Shi-Xuan Du, Cheng-Min Shen, Hong-Liang Lu & Hong-Jun Gao

  2. CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Bei**g, 100190, China

    Wu Zhou, **ao Lin, Shi-Xuan Du, Cheng-Min Shen, Hong-Liang Lu & Hong-Jun Gao

  3. Songshan Lake Materials Laboratory, Dongguan, 523808, China

    Shi-Xuan Du & Hong-Jun Gao

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  1. Xue-Yan Wang
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  2. Hui Guo
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Corresponding author

Correspondence to Hong-Liang Lu.

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Wang, XY., Guo, H., Shi, JA. et al. MgO intercalation and crystallization between epitaxial graphene and Ru(0001). Rare Met. 41, 304–310 (2022). https://doi.org/10.1007/s12598-021-01792-3

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  • DOI: https://doi.org/10.1007/s12598-021-01792-3

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