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Structural, dielectric and a.c. conductivity study of Sb2O3 thin film obtained by thermal oxidation of Sb2S3

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Abstract

This work highlights some physical properties of Sb2O3 thin films obtained through heat treatment of Sb2S3 thin films under an atmospheric pressure at 400°C. The obtained material is characterized by X-ray diffraction and impedance spectroscopy. X-ray diffraction analysis shows that Sb2O3 thin films were crystallized in cubic structure having a preferential growth along (222) plane. The grain size is found to be around 65 nm. The electrical conductivity was studied using impedance spectroscopy technique in the frequency range from 5 Hz to 13 MHz at temperatures lying in 638–698 K domain. Besides, the frequency and temperature dependence of the complex impedance, a.c. conductivity and complex electric modulus have been investigated.

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Authors and Affiliations

  1. Unité de Physique des Dispositifs a Semi-Conducteurs, Faculté des Sciences de Tunis, Université de Tunis El Manar, 2092, Tunis, Tunisia

    M HAJ LAKHDAR, T LARBI, B OUNI & M AMLOUK

  2. Laboratoire de Photovoltaïque et Matériaux Semiconducteurs, Ecole Nationale d’Ingénieurs de Tunis, Université de Tunis El Manar, 2092, Tunis, Tunisia

    B KHALFALLAH

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  1. M HAJ LAKHDAR
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  2. T LARBI
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  4. B OUNI
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  5. M AMLOUK
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Correspondence to M HAJ LAKHDAR.

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LAKHDAR, M.H., LARBI, T., KHALFALLAH, B. et al. Structural, dielectric and a.c. conductivity study of Sb2O3 thin film obtained by thermal oxidation of Sb2S3 . Bull Mater Sci 39, 1801–1808 (2016). https://doi.org/10.1007/s12034-016-1335-3

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  • DOI: https://doi.org/10.1007/s12034-016-1335-3

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