Abstract
The origin of the radiative recombination leading to yellow luminescence (YL) has been elucidated by the study of luminescence properties of GaN films grown with two different gas feeding methods. GaN films were grown on a (0001) sapphire substrate in a rapid thermal chemical vapor deposition (RTCVD) reactor. GaN films emitted two different luminescence energies, 2.2 and 3.47 eV, depending on the introducing position of hydrogen gas in the growth reactor. The distribution of the TMGa flow and gas phase reactions in the reactor were investigated to understand the effect of the gas feeding methods on the optical properties of GaN films. The results suggest that YL is related to Ga vacancies in the grown films.
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References
S. Nakamura, M. Senoh, N. Isawa, and S. Nagahama, Jpn. J. Appl. Phys. 34, L797 (1995).
S. Nakamura, M. Senoh, N. Isawa, and S. Nagahama, Appl. Phys. Lett. 67, 1868 (1995).
H. Morkoç, A. Botchkarev, A. Salvador, and B. Sverdlov, J. Cryst. Growth 150, 887 (1995).
J.D. Parsons, J. Cryst. Growth 116, 287 (1992).
S.D. Lester, F.A. Ponce, M.G. Grawfold, and D.A. Steigerwald, Appl. Phys. Lett. 66, 1249 (1995).
K. Nishida, S. Haneda, K. Hara, H. Munekata, and H. Kukimoto, J. Cryst. Growth 170, 312 (1997).
T. Ogino and M. Aoki, Jpn. J. Appl. Phys. 19, 2395 (1980).
E.R. Glaser, T.A. Lennedy, K. Doverspike, L.B. Rowland, D.K. Gaskill, J.A. Freitas, Jr., M.A. Khan, D.T. Olson, and J.N. Kuznia, Phys. Rev. B51, 13326 (1995).
J.I. Pankove and J.A. Hutchby, J. Appl. Phys. 47, 5387 (1976).
R. Singh, R.J. Molnar, M.S. Unlu, and T.D. Moustakas, Appl. Phys. Lett. 64, 336 (1994).
T. Suski, P. Perlin, H. Teisseyre, M. Leszczynski, I. Grzegory, J. Jun, M. Bockowski, S. Porowski, and T.D. Moustakas, Appl. Phys. Lett. 67, 2188 (1995).
J. Neugebauer and C.G. Van de Walle, Phys. Rev. B50, 8067 (1994).
X. Zhang, P. Kung, D. Walker, A. Saxler, and M. Razeghi, Mat. Res. Soc. Sympn. Proc. 395 (Warrendale, PA: Mater. Res. Soc., 1995), p. 625.
H.S. Fogler, Elements of Chemical Reaction Engineering (Princeton, NJ: Prentice-Hall International, Inc., 1992), p. 241.
S.V. Patankar, Numerical Heat Transfer and Fluid Flow (New York: McGraw-Hill Book Co., 1980), p. 331.
Y.B. Hahn and H.Y. Sohn, Chem. Eng. Commun. 61, 39 (1987).
G. Yi and B.W. Wessels, Appl. Phys. Lett. 70, 357 (1997).
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Kim, S.J., Seo, Y.H., Nahm, K.S. et al. Effect of gas feeding methods on optical properties of GaN grown by rapid thermal chemical vapor deposition reactor. J. Electron. Mater. 28, 970–974 (1999). https://doi.org/10.1007/s11664-999-0206-8
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DOI: https://doi.org/10.1007/s11664-999-0206-8