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Rectifying Characteristics of Heterostructures with Diamond and Diamond- Like Carbon Films

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Abstract

Semiconducting diamond-like carbon (DLC) films were deposited on n-type Si substrates by the electrodeposition method, and diamond films were formed on the carbon film and/or a Si substrate directly by the hot-filament chemical vapor deposition method. Rectifying heterostructures of Al/DLC/Si/Al, Al/diamond/Si/ Al, and Al/diamond/DLC/Si/Al were fabricated. The Al/DLC/Si/Al structure has a bulk resistivity of 6 × 105 Ω-cm and a rectification ratio close to two orders of magnitude. Experimental results demonstrate that the Al/diamond/DLC/Si/Al bilayer structure can significantly reduce the leakage current to about 10-10 A and increase the rectification ratio by 3-5 orders of magnitude at 5 V, compared with that of the other two structures. Possible reasons are given for the changes of the rectifying characteristic.

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Authors and Affiliations

  1. Department of Physics, Suzhou University, 215006, Suzhou, China

    Ming-Rong Shen, Hao Wang, Zhao-Yuan Ning, Chao Ye & Zhao-Qiang Gan

  2. Institute of Plasma Physics, Academia Sinica, 230031, Hefei, China

    Zhao-**ng Ren

Authors
  1. Ming-Rong Shen
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  2. Hao Wang
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  3. Zhao-Yuan Ning
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  4. Chao Ye
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  5. Zhao-Qiang Gan
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  6. Zhao-**ng Ren
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Shen, MR., Wang, H., Ning, ZY. et al. Rectifying Characteristics of Heterostructures with Diamond and Diamond- Like Carbon Films. J. Electron. Mater. 26, 910–914 (1997). https://doi.org/10.1007/s11664-997-0273-7

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  • DOI: https://doi.org/10.1007/s11664-997-0273-7

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