Abstract
An InZnSnO2 (IZTO)/β-Ga2O3 solar blind Schottky barrier diode photodetector (PhD) exposed to 255 nm, 385 nm and 500 nm light wavelengths was simulated and compared with measurement. The measured dark photocurrent at reverse bias and responsivity were successfully reproduced by numerical simulation by considering several factors such as conduction mechanisms and material parameters. Further optimizations based on reducing trap densities and insertion of a 50-nm \({\left({\mathrm{Al}}_{0.39}{\mathrm{Ga}}_{0.61}\right)}_{2}{\mathrm{O}}_{3}\) passivation layer between IZTO and β-Ga2O3 are carried out. The effect of reducing bulk traps densities on the photocurrent, responsivity and time-dependent photoresponse (persistent conductivity) were studied. With decreasing traps densities, the photocurrent increased. Responsivity reached 0.04 A/W for low β-Ga2O3 trap densities. The decay time estimated for the lowest \({E}_{{T}}\; (0.74, 1.04\; \mathrm{eV})\) densities is \(\sim 0.05\; \mathrm{s}\) and is shorter at \(\sim 0.015\; \mathrm{s}\) for \({E}_{{T}}\; (0.55\; \mathrm{eV})\). This indicates that the shallowest traps had the dominant influence (\({E}_{{T}}=0.55\; \mathrm{eV}\)) on the persistent photoconductivity phenomenon. Furthermore, with decreasing trap densities, this PhD can be considered as a self-powered solar-blind photodiode (SBPhD). The insertion of a \({\left({\mathrm{Al}}_{0.39}{\mathrm{Ga}}_{0.61}\right)}_{2}{\mathrm{O}}_{3}\) passivation layer increases the photocurrent which is related to a recombination decrease and the photogenerated carrier increase, and hence the increase of the internal quantum efficiency.
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References
T. Toda, M. Hata, Y. Nomura, Y. Ueda, M. Sawada, and M. Shono, Operation at 700°C of 6H-SiC UV sensor fabricated using N+implantation. Jpn. J. Appl. Phys. 43, L27 (2003).
M. Liao, Y. Koide, and J. Alvarez, Thermally stable visible-blind diamond photodiode using tungsten carbide Schottky contact. Appl. Phys. Lett. 87, 22105 (2005).
E. Muñoz, N-based photodetectors. Some materials issues. Phys. Status Solidi B 244, 2859 (2007).
A. Soltani, H.A. Barkad, M. Mattalah, B. Benbakhti, J.-C. De Jaeger, Y.M. Chong, Y.S. Zou, W.J. Zhang, S.T. Lee, A. BenMoussa, B. Giordanengo, and J.-F. Hochedez, 193 nm Deep-ultraviolet solar-blind cubic boron nitride based photodetectors. Appl. Phys. Lett. 92, 53501 (2008).
T. Wei, D. Tsai, P. Ravadgar, J. Ke, M. Tsai, D. Lien, C. Huang, R. Horng, and J. He, See-through Ga2O3 solar-blind photodetectors for use in harsh environments. IEEE J. Sel. Top. Quantum Electron. 20, 112 (2014).
Y. Zou, Y. Zhang, Y. Hu, and H. Gu, Ultraviolet detectors based on wide bandgap semiconductor nanowire: a review. Sensors 18, 2072 (2018).
Y. Sui, H. Liang, W. Huo, Y. Wang, and Z. Mei, A flexible and transparent β-Ga2O3 solar-blind ultraviolet photodetector on mica. J. Phys. D Appl. Phys. 53, 504001 (2020).
H. Kim, H.-J. Seok, J.H. Park, K.-B. Chung, S. Kyoung, H.-K. Kim, and Y.S. Rim, Fully transparent InZnSnO/β-Ga2O3/InSnO solar-blind photodetectors with high Schottky barrier height and low-defect interfaces. J. Alloys Compd. 890, 161931 (2021).
D. Kaur and M. Kumar, A strategic review on gallium oxide based deep-ultraviolet photodetectors. Recent progress and future prospects. Adv. Opt. Mater. 9, 2002160 (2021).
M. Labed, H. Kim, J.H. Park, M. Labed, A. Meftah, N. Sengouga, and Y.S. Rim, Nanomaterials 12, 1061 (2022).
A. BenMoussa, A. Soltani, U. Schühle, K. Haenen, Y.M. Chong, W.J. Zhang, R. Dahal, J.Y. Lin, H.X. Jiang, H.A. Barkad, B. BenMoussa, D. Bolsee, C. Hermans, U. Kroth, C. Laubis, V. Mortet, J.C. De Jaeger, B. Giordanengo, M. Richter, F. Scholze, and J.F. Hochedez, Recent developments of wide-bandgap semiconductor based UV sensors. Diam. Relat. Mater. 18, 860 (2009).
N. Kumar, K. Arora, and M. Kumar, High performance, flexible and room temperature grown amorphous Ga2O3 solar-blind photodetector with amorphous indium-zinc-oxide transparent conducting electrodes. J. Phys. D Appl. Phys. 52, 335103 (2019).
J. Yu, C.X. Shan, J.S. Liu, X.W. Zhang, B.H. Li, and D.Z. Shen, MgZnO avalanche photodetectors realized in Schottky structures. Phys. Status Solidi RRL 7, 425 (2013).
Z.G. Shao, D.J. Chen, H. Lu, R. Zhang, D.P. Cao, W.J. Luo, Y.D. Zheng, L. Li, and Z.H. Li, High-gain AlGaN solar-blind avalanche photodiodes. IEEE Electron Device Lett. 35, 372 (2014).
K. Balakrishnan, A. Bandoh, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki, Influence of high temperature in the growth of low dislocation content AlN bridge layers on patterned 6H-SiC substrates by metalorganic vapor phase epitaxy. Jpn. J. Appl. Phys. 46, L307 (2007).
S. Salvatori, M.C. Rossi, F. Galluzzi, and E. Pace, Solar-blind UV-photodetector based on polycrystalline diamond films: basic design principle and comparison with experimental results. Mater. Sci. Eng. B Solid State Mater. Adv. Technol. 46, 105 (1997).
Y.-C. Chen, Y.-J. Lu, C.-N. Lin, Y.-Z. Tian, C.-J. Gao, L. Dong, and C.-X. Shan, Self-powered diamond/β-Ga2O3 photodetectors for solar-blind imaging. J. Mater. Chem. C Mater. 6, 5727 (2018).
J.Y. Tsao, S. Chowdhury, M.A. Hollis, D. Jena, N.M. Johnson, K.A. Jones, R.J. Kaplar, S. Rajan, C.G. Van de Walle, E. Bellotti, C.L. Chua, R. Collazo, M.E. Coltrin, J.A. Cooper, K.R. Evans, S. Graham, T.A. Grotjohn, E.R. Heller, M. Higashiwaki, M.S. Islam, P.W. Juodawlkis, M.A. Khan, A.D. Koehler, J.H. Leach, U.K. Mishra, R.J. Nemanich, R.C.N. Pilawa-Podgurski, J.B. Shealy, Z. Sitar, M.J. Tadjer, A.F. Witulski, M. Wraback, and J.A. Simmons, Ultrawide-bandgap semiconductors. Research opportunities and challenges. Adv. Electron. Mater. 4, 1600501 (2018).
L. Sang, M. Liao, and M. Sumiya, A comprehensive review of semiconductor ultraviolet photodetectors. From thin film to one-dimensional nanostructures. Sensors 13, 10482–10518 (2013).
X. Chen, F.-F. Ren, J. Ye, and S. Gu, Gallium oxide-based solar-blind ultraviolet photodetectors. Semicond. Sci. Technol. 35, 023001 (2020).
X. Chen, K. Liu, Z. Zhang, C. Wang, B. Li, H. Zhao, D. Zhao, and D. Shen, Self-powered solar-blind photodetector with fast response based on Au/β-Ga2O3 nanowires array film Schottky junction. ACS Appl. Mater. Interfaces 8, 4185 (2016).
L.-X. Qian, Z.-H. Wu, Y.-Y. Zhang, P.T. Lai, X.-Z. Liu, and Y.-R. Li, Ultrahigh-responsivity, rapid-recovery, solar-blind photodetector based on highly nonstoichiometric amorphous gallium oxide. ACS Photonics 4, 2203 (2017).
S. Cui, Z. Mei, Y. Zhang, H. Liang, and X. Du, Room-temperature fabricated amorphous Ga2O3 high-response-speed solar-blind photodetector on rigid and flexible substrates. Adv. Opt. Mater. 5, 1700454 (2017).
S. Lany and A. Zunger, Dopability, intrinsic conductivity, and nonstoichiometry of transparent conducting oxides. Phys. Rev. Lett. 98, 45501 (2007).
X.Z. Liu, P. Guo, T. Sheng, L.X. Qian, W.L. Zhang, and Y.R. Li, β-Ga2O3 thin films on sapphire pre-seeded by homo-self-templated buffer layer for solar-blind UV photodetector. Opt. Mater. 51, 203 (2016).
C.A. Hoel, T.O. Mason, J.-F. Gaillard, and K.R. Poeppelmeier, Transparent conducting oxides in the ZnO-In2O3-SnO2 system. Chem. Mater. 22, 3569 (2010).
M. Labed, J.Y. Min, J.Y. Hong, Y.-K. Jung, S. Kyoung, K.W. Kim, K. Heo, H. Kim, K. Choi, N. Sengouga, and Y.S. Rim, Interface engineering of β-Ga2O3 MOS-type Schottky barrier diode using an ultrathin HfO2 interlayer. Surf. Interfaces 33, 102267 (2022).
M. Labed, J.H. Park, A. Meftah, N. Sengouga, J.Y. Hong, Y.-K. Jung, and Y.S. Rim, Low temperature modeling of Ni/β-Ga2O3 Schottky barrier diode interface. ACS Appl. Electron. Mater. 3, 3667 (2021).
S. Sze and M. Lee, Semiconductor Devices Physics and Technology (New York: John Wiley & Sons, 2012).
M. Labed, N. Sengouga, A. Meftah, M. Labed, S. Kyoung, H. Kim, and Y.S. Rim, Leakage current modelling and optimization of β-Ga2O3 Schottky barrier diode with Ni contact under high reverse voltage. ECS J. Solid State Sci. Technol. 9, 125001 (2020).
W. Li, D. Saraswat, Y. Long, K. Nomoto, D. Jena, and H.G. **ng, Near-ideal reverse leakage current and practical maximum electric field in β-Ga2O3 Schottky barrier diodes. Appl. Phys. Lett. 116, 192101 (2020).
R. Lingaparthi, K. Sasaki, Q.T. Thieu, A. Takatsuka, F. Otsuka, S. Yamakoshi, and A. Kuramata, Surface related tunneling leakage in β-Ga2O3 (001) vertical Schottky barrier diodes. Appl. Phys. Express 12, 074008 (2019).
J.-H. Choi, C.-H. Cho, and H.-Y. Cha, Design consideration of high voltage Ga2O3 vertical Schottky barrier diode with field plate. Results Phys. 9, 1170 (2018).
J. Dziewior and W. Schmid, Auger coefficients for highly doped and highly excited silicon. Appl. Phys. Lett. 31, 346 (1977).
Z. Galazka, β -Ga2O3 for wide-bandgap electronics and optoelectronics. Semicond. Sci. Technol. 33, 113001 (2018).
M. Labed, N. Sengouga, M. Labed, A. Meftah, S. Kyoung, H. Kim, and Y.S. Rim, Modeling a Ni/β-Ga2O3 Schottky barrier diode deposited by confined magnetic-field-based sputtering. J. Phys. D Appl. Phys. 54, 115102 (2021).
A.Y. Polyakov, I.H. Lee, N.B. Smirnov, E.B. Yakimov, I.V. Shchemerov, A.V. Chernykh, A.I. Kochkova, A.A. Vasilev, P.H. Carey, F. Ren, D.J. Smith, and S.J. Pearton, Defects at the surface of β -Ga2O3 produced by Ar plasma exposure. APL Mater. 7, 061102 (2019).
M. Labed, N. Sengouga, and Y.S. Rim, Control of Ni/β-Ga2O3 vertical Schottky diode output parameters at forward bias by insertion of a graphene layer. Nanomaterials 12, 827 (2022).
L. Shi and S. Nihtianov, Comparative study of silicon-based ultraviolet photodetectors. IEEE Sens. J. 12, 2453 (2012).
Y. Qin, S. Long, H. Dong, Q. He, G. Jian, Y. Zhang, X. Hou, P. Tan, Z. Zhang, H. Lv, Q. Liu, and M. Liu, Review of deep ultraviolet photodetector based on gallium oxide. Chin. Phys. B 28, 18501 (2019).
J.-W. Oh, C. Lee, and N. Kim, The effect of trap density on the space charge formation in polymeric photorefractive composites. J. Chem. Phys. 130, 134909 (2009).
B.R. Tak, M.-M. Yang, M. Alexe, and R. Singh, Crystals 11, 1046 (2021).
Z. Hu, Q. Feng, J. Zhang, F. Li, X. Li, Z. Feng, C. Zhang, and Y. Hao, Optical properties of (AlxGa1−x)2O3 on sapphire. Superlattices Microstruct. 114, 82 (2018).
H. Peelaers, J.B. Varley, J.S. Speck, and C.G. Van de Walle, Structural and electronic properties of Ga2O3-Al2O3 alloys. Appl. Phys. Lett. 112, 242101 (2018).
Acknowledgments
This paper was supported by the Technology Innovation Program—(20016102, Development of 1.2kV Gallium oxide power semiconductor devices technology) funded by MOTIE, Korea.
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This project was funded by Technology Innovation Program (Grant No. 20016102).
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Cherroun, R., Meftah, A., Labed, M. et al. Study of a Solar-Blind Photodetector Based on an IZTO/β-Ga2O3/ITO Schottky Diode. J. Electron. Mater. 52, 1448–1460 (2023). https://doi.org/10.1007/s11664-022-10081-3
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DOI: https://doi.org/10.1007/s11664-022-10081-3