Abstract
An analysis of carrier transport is performed on multilayer HgCdTe heterostructures with complex composition and do** profiles by combining models for carrier scattering with multilayer modeling of the transport properties obtained through resistivity and Hall measurements of the entire multilayer stack. The analysis is applied to the study of carrier scattering in low-doped HgCdTe multilayers grown on (211) CdZnTe substrates by molecular beam epitaxy. The predictive capability of the modeling and its usefulness as a form of rapid and accurate feedback from simple Hall effect measurements are highlighted. The ability to routinely produce HgCdTe films with free carrier concentration (nd–na) in the range of 1013–1014 cm−3 while preserving carrier mobility with respect to higher concentrations is evident from the dependence of mobility on carrier density for fixed HgCdTe compositions.
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References
T. Ashley, and C.T. Elliott, Nonequilibrium Devices for Infrared Detection. Electron. Lett. 21, 451 (1985).
T. Ashley, C. T. Elliott, and A. M. White, Non-equilibrium devices for infrared detection, in Proc SPIE 0572 infrared technology XI. (1985)
D. Lee, M. Carmody, E. Piquette, P. Dreiske, A. Chen, A. Yulius, D. Edwall, S. Bhargava, M. Zandian, and W.E. Tennant, High-Operating Temperature HgCdTe: A Vision for the Near Future. J. Electron. Mater. 45, 4587 (2016).
L. Wang, A. Wang, and S. Price, Accurate Determination of the Matrix Composition Profile of Hg1–xCdxTe by Secondary Ion Mass Spectrometry. J. Electron. Mater. 36, 8 (2007).
Private communication with A. Wang at evans analytical group.
J. Antoszewski, L. Faraone, I. Vurgaftman, J.R. Meyer, and C.A. Hoffman, Application of Quantitative Mobility-Spectrum Analysis to Multilayer HgCdTe Structures. J. Electron. Mater. 33, 673 (2004).
R. Petriz, Theory of an Experiment for Measuring the Mobility and Density of Carriers in the Space-Charge Region of a Semiconductor Surface. Phys. Rev. 110, 1254 (1958).
O. Bierwagen, S. Choi, and J.S. Speck, Hall and Seebeck profiling: Determining Surface, Interface, and bulk Electron Transport Properties in Unintentionally Doped InN Phys. Rev. B 85, 165205 (2012).
P.S. Wijewarnasuriya, M.D. Langer, S. Sivananthan, and J.P. Faurie, Analysis of Low Do** Limitation in Molecular Beam Epitaxially Grown HgCdTe(211)B Epitaxial Layers. J. Electron. Mater. 24, 1211–1218 (1995).
D.D. Edwall, M. Zandian, A.C. Chen, and J.M. Arias, Improving Material Characteristics and Reproducibility of MBE HgCdTe. J. Electron. Mater. 26, 493 (1997).
G.L. Hansen, J.L. Schmidt, and T.N. Casselman, Energy Gap Versus alloy Composition and Temperature in Hg1−xCdxTe. J. Appl. Phys. 53, 7099 (1982).
S.L. Price and P.R. Boyd, Overview of Compositional Measurement Techniques for HgCdTe with Emphasis on IR Transmission, Energy Dispersive X-Ray Analysis and Optical Reflectance. Semicond. Sci. Technol. 8, 842 (1993).
K. Moazzami, D. Liao, J.D. Phillips, D.L. Lee, M. Carmody, M. Zandian, and D.D. Edwall, Optical Absorption Properties of HgCdTe Epilayers with Uniform Composition. J. Electron. Mater. 32, 646 (2003).
M. Daraselia, M. Carmody, M. Zandian, and J.M. Arias, Improved Model for the Analysis of FTIR Transmission Spectra from Multilayer HgCdTe Structures. J. of Electron. Mater. 33, 761 (2004).
N.T. Gordon, S. Barton, P. Capper, C.L. Jones, and N. Metcalfe, Electron Mobility in p-type Epitaxially Grown Hg1-xCdxTe. Semicond. Sci. Technol. 8, S221 (1993).
S.D. Yoo and K.D. Kwack, Theoretical Calculation of Electron Mobility in HgCdTe. J. Appl. Phys. 81, 2 (1997).
W. Scott, Electron Mobility in Hg1−xCdxTe. J. Appl. Phys. 43, 1055 (1972).
G.L. Hansen and J.L. Schmit, Calculation of Intrinsic Carrier Concentration in Hg1−xCdxTe. J. Appl. Phys. 54, 1639 (1983).
See P. Capper, Properties of Narrow Gap Cadmium-based Compounds, London and the references therein. (1994)
M. Lundstrom, Fundamentals of Carrier Transport, 2nd Edn. (Cambridge, 2009)
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The authors acknowledge and greatly appreciate the support of this work by their colleagues at Teledyne Scientific and Imaging. The authors acknowledge and thank Alice Wang and Peter Zhao at Evans Analytical Group (now Eurofins EAG Materials Science) for performing SIMS measurements and useful discussions.
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Shojaei, B., Wang, S., Gruenewald, J. et al. Studies of Scattering Mechanisms in Multilayer HgCdTe Heterostructures. J. Electron. Mater. 51, 4714–4720 (2022). https://doi.org/10.1007/s11664-022-09802-5
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DOI: https://doi.org/10.1007/s11664-022-09802-5