Abstract
The fabrication of Schottky barrier diodes based on thin films of 21H polytype of SiC is reported. The films were deposited using a single composite target of Si and graphite by magnetron sputtering. The formation of the 21H polytype of SiC was confirmed by x-ray diffraction. The devices were fabricated on single-crystal Si substrates, and electrical properties with TiN and Au/TiN as top lateral contacts were investigated. The rectifying nature, temperature (in the range 300–423 K), and top electrode work function dependence of Schottky parameters were investigated. The room-temperature turn-on voltages for the TiN and Au/TiN top contacts were 8.9 V and 12.8 V, respectively. The ideality factor decreased while the barrier height increased with an increase in temperature. The barrier height for different temperatures was in the range of 1.16–0.82 eV and 0.9–0.77 eV for TiN and Au/TiN interfaces with SiC, respectively. The presence of TiCxNy on the surface of the TiN-SiC-Si-Au device at high temperatures observed using Raman spectroscopy revealed the inhomogeneity due to variation in local interfacial structure. It was demonstrated that the 21H-SiC-based thin film Schottky barrier diodes are a promising alternative for many applications.
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References
S.M. Sze, Physics of Semiconductor Devices, 2nd ed. (New York: Wiley, 1981).
P. Friedrichs, Phys. Status Solidi 245, 1232 (2008).
F. Iacopi, M. Van Hove, M. Charles, and K. Endo, MRS Bull. 40, 390 (2015).
A. Elasser and T.P. Chow, Proc. IEEE 90, 969 (2002).
A. Itoh and H. Matsunami, Phys. Status Solidi Appl. Res. 162, 389 (1997).
E. Omotoso, F.D. Auret, E. Igumbor, S.M. Tunhuma, H.T. Danga, P.N.M. Ngoepe, B.A. Taleatu, and W.E. Meyer, Appl. Phys. A Mater. Sci. Process. 124, 395 (2018).
G.S. Chung, K.S. Kim, and F. Yakuphanoglu, J. Alloys Compd. 507, 508 (2010).
G.S. Chung and J.H. Ahn, Microelectron. Eng. 85, 1772 (2008).
K.S. Kim and G.S. Chung, Sensors Actuators B Chem. 160, 1232 (2011).
J.A. Edmond, J. Electrochem. Soc. 135, 359 (1988).
V.E. Gora, A. Chawanda, C. Nyamhere, F.D. Auret, F. Mazunga, T. Jaure, B. Chibaya, E. Omotoso, H.T. Danga, and S.M. Tunhuma, Phys. B Condens. Matter 535, 333 (2018).
L.M. Porter and R.F. Davies, Mater. Sci. Eng. B B34, 83 (1995).
L. Hultman, H. Ljungcrantz, C. Hallin, E. Janzén, J.E. Sundgren, B. Pécz, and L.R. Wallenberg, J. Mater. Res. 11, 2458 (1996).
S. DelaCruz, Z. Wang, P. Cheng, C. Carraro, and R. Maboudian, Thin Solid Films 670, 54 (2019).
A.A. Iliadis, S.N. Andronescu, K. Edinger, J.H. Orloff, R.D. Vispute, V. Talyansky, R.P. Sharma, T. Venkatesan, M.C. Wood, and K.A. Jones, Appl. Phys. Lett. 73, 3545 (1998).
A.D. Pogrebnjak, V.I. Ivashchenko, P.L. Skrynskyy, O.V. Bondar, P. Konarski, K. Załęski, S. Jurga, and E. Coy, Compos. Part B Eng. 142, 85 (2018).
Z. Wang, X. Wang, W. Liu, X. Ji, and C. Wang, Ceram. Int. 46, 7142 (2020).
V.I. Ivashchenko, S. Veprek, P.E.A. Turchi, and V.I. Shevchenko, Phys. Rev. B Condens. Matter Mater. Phys. 86, 014110 (2012).
R.C. Glass, L.M. Spellman, S. Tanaka, and R.F. Davis, J. Vac. Sci. Technol. A Vacuum Surfaces Film. 10, 1625 (1992).
F. Yigiterol, H.H. Gullu, and E.D. Yildiz, Bull. Mater. Sci. 41, 66 (2018).
V.E. Gora, F.D. Auret, H.T. Danga, S.M. Tunhuma, C. Nyamhere, E. Igumbor, and A. Chawanda, Mater. Sci. Eng. B Solid State Mater. Adv. Technol. 247, 114370 (2019).
A. Sefaoǧlu, S. Duman, S. Doǧan, B. Gürbulak, S. Tüzemen, and A. Türüt, Microelectron. Eng. 85, 631 (2008).
K. Zeghdar, L. Dehimi, F. Pezzimenti, M.L. Megherbi, and F.G. Dellacorte, J. Electron. Mater. 49, 1322 (2020).
P.C. Akshara, G. Rajaram, and M.G. Krishna, Mater. Res. Express 5, 036410 (2018).
K. Vasu, M.G. Krishna, and K.A. Padmanabhan, J. Mater. Sci. 47, 3522 (2012).
M.S.R.N. Kiran, M. Ghanashyamkrishna, and K.A. Padmanabhan, Solid State Commun. 151, 561 (2011).
S.J. Chang, C.H. Chen, Y.K. Su, J.K. Sheu, W.C. Lai, J.M. Tsai, C.H. Liu, and S.C. Chen, IEEE Electron Device Lett. 24, 129 (2003).
V. Khemka, R. Patel, T.P. Chow, and R.J. Gutmann, Solid. State. Electron. 43, 1945 (1999).
M. Genut and M. Eizenberg, Appl. Phys. Lett. 53, 672 (1988).
L. Magafas, N. Georgoulas, and A. Thanailakis, Microelectronics J. 28, 107 (1997).
S.K. Cheung and N.W. Cheung, Appl. Phys. Lett. 49, 85 (1986).
H. Norde, J. Appl. Phys. 50, 5052 (1979).
S. Sankar Naik and V. Rajagopal Reddy, Adv. Mater. Lett. 3, 188 (2012).
K. Ç. Demir, C. Coşkun, S. V Kurudirek, S. Öz, Aydoǧan, and M. Biber, in J. Phys. Conf. Ser. (2016), p. 012023
N. Kaymak, E. Efil, E. Seven, A. Tataroǧlu, S. Bilge, and E. Oz Orhan, Mater. Res. Express 6, 026309 (2019).
S.K. Lee, C.M. Zetterling, and M. Östling, J. Appl. Phys. 87, 8039 (2000).
F. Roccaforte, F. La Via, V. Raineri, R. Pierobon, and E. Zanoni, J. Appl. Phys. 93, 9137 (2003).
I. Jyothi, H.-D. Yang, K.-H. Shim, V. Janardhanam, S.-M. Kang, H. Hong, and C.-J. Choi, Mater. Trans. 54, 1655 (2013).
K.-H. Shim, C.-J. Choi, V. Janardhanam, H. Hong, H.-D. Yang, I. Jyothi, and S.-M. Kang, Mater. Trans. 54, 1655 (2013).
R.T. Tung, Phys. Rev. B 45, 13509 (1992).
J.H. Werner and H.H. Güttler, J. Appl. Phys. 73, 1315 (1993).
S.-K. Lee, C.-M. Zetterling, and M. Östling, J. Electron. Mater. 30, 242 (2001).
T. Güzel, A.K. Bilgili, and M. Özer, Superlattices Microstruct. 124, 30 (2018).
H. Cetin and E. Ayyildiz, Semicond. Sci. Technol. 20, 625 (2005).
S. Chand and J. Kumar, J. Appl. Phys. 80, 288 (1998).
S. Duman, B. Gurbulak, and A. Turut, Appl. Surf. Sci. 253, 3899 (2007).
N. Tuǧluoǧlu, S. Karadeniz, M. Şahin, and H. Şafak, Semicond. Sci. Technol. 19, 1092 (2004).
R. Yatskiv, S. Tiagulskyi, and J. Grym, J. Electron. Mater. 49, 5133 (2020).
I. Hussain, M.Y. Soomro, N. Bano, O. Nur, and M. Willander, J. Appl. Phys. 113, 234509 (2013).
V. Mikhelashvili, G. Eisenstein, and R. Uzdin, Solid. State. Electron. 45, 143 (2001).
H.M.J. Al-Taii, Y.M. Amin, and V. Periasamy, Sensors (Switzerland) 15, 4810 (2015).
M. Wittmer, Phys. Rev. B 42, 5249 (1990).
R. Pérez, N. Mestres, J. Montserrat, D. Tournier, and P. Godignon, Phys. Status Solidi Appl. Mater. Sci. 202, 692 (2005).
M. Biber, Phys. B Condens. Matter 325, 138 (2003).
Y.Y. Kudryk, V.V. Shynkarenko, V.S. Slipokurov, R.I. Bigun, and R.Y. Kudryk, Semicond. Phys. Quantum Electron. Optoelectron. 17, 398 (2014).
A.F. Hamida, Z. Ouennoughi, A. Sellai, R. Weiss, and H. Ryssel, Semicond. Sci. Technol. 23, 045005 (2008).
B.L. Smith and E.H. Rhoderick, Solid State Electron. 14, 71 (1971).
M. Kadoshima, T. Matsuki, S. Miyazaki, K. Shiraishi, C. Chikyo, K. Yamada, T. Aoyama, Y. Nara, and Y. Ohji, IEEE Electron Device Lett. 30, 466 (2009).
S.A. Vitale, J. Kedzierski, P. Healey, P.W. Wyatt, and C.L. Keast, IEEE Trans. Electron Devices 58, 419 (2011).
J. Pelletier, D. Gervais, and C. Pomot, J. Appl. Phys. 55, 994 (1984).
R. Lewandków, M. Grodzicki, P. Mazur, and A. Ciszewski, Vacuum 177, 109345 (2020).
J.B. Casady and R.W. Johnson, Solid. State. Electron. 39, 1409 (1996).
R.T. Tung, Appl. Phys. Rev. 1, 011304 (2014).
J.H. Werner and H.H. Güttler, J. Appl. Phys. 69, 1522 (1991).
P.M. Gammon, A. Ṕrez-Tomás, V.A. Shah, G.J. Roberts, M.R. Jennings, J.A. Covington, and P.A. Mawby, J. Appl. Phys. 106, 093708 (2009).
M.E. Aydin, N. Yildirim, and A. Türüt, J. Appl. Phys. 102, 043701 (2007).
Y.P. Song, R.L. Van Meirhaeghe, W.H. Laflère, and F. Cardon, Solid State Electron. 29, 633 (1986).
W. Mtangi, F.D. Auret, C. Nyamhere, P.J. Janse van Rensburg, A. Chawanda, and M. Diale, Phys. B Condens. Matter 404, 1092 (2009).
Ş Aydoǧan, M. Saǧlam, and A. Türüt, Appl. Surf. Sci. 250, 43 (2005).
M.K. Hudait and S.B. Krupanidhi, Phys. B Condens. Matter 307, 125 (2001).
S. Chand and J. Kumar, Appl. Phys. A Mater. Sci. Process. 63, 171 (1996).
R. Hackam and P. Harrop, IEEE Trans. Electron Devices 19, 1231 (1972).
K. Shenai and R.W. Dutton, IEEE Trans. Electron Devices 35, 468 (1988).
A.C. Ferrari, J.C. Meyer, V. Scardaci, C. Casiraghi, M. Lazzeri, F. Mauri, S. Piscanec, D. Jiang, K.S. Novoselov, S. Roth, and A.K. Geim, Phys. Rev. Lett. 97, 187401 (2006).
N. Saoula, N. Madaoui, R. Tad**e, R.M. Erasmus, S. Shrivastava, and J.D. Comins, Thin Solid Films 616, 521 (2016).
Y.H. Cheng, B.K. Tay, S.P. Lau, H. Kupfer, and F. Richter, J. Appl. Phys. 92, 1845 (2002).
S. Louring, N.D. Madsen, M. Sillassen, A.N. Berthelsen, B.H. Christensen, K.P. Almtoft, H. Ronkainen, L.P. Nielsen, and J. Bøttiger, Surf. Coatings Technol. 245, 40 (2014).
N.A. Papanicolaou, A. Christou, and M.L. Gipe, J. Appl. Phys. 65, 3526 (1989).
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Facilities and support provided by the Centre for Nanotechnology and CASEST, School of Physics under the UGC-DRS, UGC-UPE, UGC-NRC, and DST-PURSE programs for this work are acknowledged.
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Akshara, P.C., Rajaram, G. & Krishna, M.G. Characteristics of 21H-SiC Thin Film-Based Schottky Barrier Diodes Using TiN Contacts. J. Electron. Mater. 50, 1412–1424 (2021). https://doi.org/10.1007/s11664-020-08597-7
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DOI: https://doi.org/10.1007/s11664-020-08597-7