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Zinc Oxide Thin-Film Transistors Fabricated at Low Temperature by Chemical Spray Pyrolysis

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Abstract

We report the electrical behavior of undoped zinc oxide thin-film transistors (TFTs) fabricated by low-temperature chemical spray pyrolysis. An aerosol system utilizing aerodynamic focusing was used to deposit the ZnO. Polycrystalline films were subsequently formed by annealing at the relatively low temperature of 140°C. The saturation mobility of the TFTs was 2 cm2/Vs, which is the highest reported for undoped ZnO TFTs manufactured below 150°C. The devices also had an on/off ratio of 104 and a threshold voltage of −3.5 V. These values were found to depend reversibly on measurement conditions.

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Acknowledgements

This work was supported by the Industrial Strategic Technology Development Program (10041808, Synthesis of Oxide Semiconductor and Insulator Ink Materials and Process Development for Printed Backplane of Flexible Displays Processed Below 150°C) funded by the Ministry of Knowledge Economy (MKE, Korea).

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Authors and Affiliations

  1. School of Engineering and Computing Sciences and Centre for Molecular and Nanoscale Electronics, Durham University, South Road, Durham, DH1 3LE, UK

    Yesul Jeong, Christopher Pearson & Michael C. Petty

  2. Centre for Process Innovation Limited, Thomas Wright Way, Sedgefield, Durham, TS21 3FG, UK

    Yong Uk Lee & Lee Winchester

  3. Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin, 446-701, Korea

    Jaeeun Hwang & Hongdoo Kim

  4. IT Convergence Technology Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon, Korea

    Lee-Mi Do

Authors
  1. Yesul Jeong
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  2. Christopher Pearson
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  3. Yong Uk Lee
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  4. Lee Winchester
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  5. Jaeeun Hwang
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  6. Hongdoo Kim
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  7. Lee-Mi Do
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  8. Michael C. Petty
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Correspondence to Michael C. Petty.

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Jeong, Y., Pearson, C., Lee, Y.U. et al. Zinc Oxide Thin-Film Transistors Fabricated at Low Temperature by Chemical Spray Pyrolysis. J. Electron. Mater. 43, 4241–4245 (2014). https://doi.org/10.1007/s11664-014-3342-8

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  • DOI: https://doi.org/10.1007/s11664-014-3342-8

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