Abstract
By using Al-based metallic alloys characterized by a disordered structure and a narrow pseudogap of a few hundred meV in energy width persisting at the Fermi level, we succeeded in preparing materials possessing a large increase of thermal conductivity with increasing temperature. This unusual increase of thermal conductivity is caused by the electronic structure effect known as the bipolar diffusion effect (BDE) in the context of the two-band model. A thermal rectifier was constructed using materials exhibiting the BDE. By showing the thermal rectification of the bulk sample prepared in this study, we demonstrate that our newly proposed idea of a thermal rectifier using the BDE is applicable for practical use.
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Takeuchi, T., Goto, H., Toyama, Y. et al. Development of a Thermal Rectifier Usable at High Temperature. J. Electron. Mater. 40, 1129–1135 (2011). https://doi.org/10.1007/s11664-011-1556-6
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DOI: https://doi.org/10.1007/s11664-011-1556-6