Abstract
The interfacial reaction between electroless Ni(P) under-bump metallization (UBM) and solders is studied. A P-rich layer forms in the UBM along the solder side after reflow and thermal aging. Crack formation inside the P-rich layer can sometimes penetrate throughout the entire UBM layer structure. The Ni(P) UBM degradation occurs earlier in the Sn3.5Ag solder than in Sn37Pb because of its higher reflow temperature. Despite the formation of a P-rich layer and cracks inside the UBM, it still keeps its original function within the high-temperature storage period in this study. Explanations for the formation of the P-rich layer and cracks in the UBM are outlined along with explanations for the Ni(P) UBM degradation process.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
A. Tsui, M. Kasem, W. McDaniel, and E. Lambka, PCIM Power Electron. Syst. 25, 20 (1999).
R.R. Tummala and E.J. Rymaszewski, Microelectronics Packaging Handbook (New York: Van Nostrand Reinhold, 1989), p. v (preface).
S.C. O’Mathuna, P. Byrne, G. Duffy, W. Chen, M. Ludwig, T. O’Donnell, and P. McCloskey, IECON Proc. 4, 3250 (2002).
R. Aschenbrenner, A. Ostmann, U. Beutler, J. Simon, and H. Reichl, IEEE Trans. Comp. Packaging Technol., Part B 18, 334 (1995).
D.A. Hutt, C. Liu, P.P. Conway, D.C. Whalley, and S.H. Mannan, IEEE Trans. Comp. Packaging Technol. 25, 87 (2002).
F. Zhang, M. Li, B. Balakrisnan, and W.T. Chen, J. Electron. Mater. 31, 1256 (2002).
K.S. Kim, C.H. Yu, N.H. Kim, N.K. Kim, H.J. Chang, and E.G. Chang, Microelectron. Reliab. 43, 757 (2003) and references therein.
S.M. Chang, R.H. Uang, D.C. Liou, H.T. Hu, K.C. Chen, Y.F. Chen, and Y.H. Chen, Electronic Components Technology Conf. (Piscataway, NJ: IEEE, 2003), pp. 1209–1214.
S.Y. Jang and K.W. Paik, Advances in Electronic Materials and Packaging 2001 (Piscataway, NJ: IEEE, 2001), pp. 121–128.
D.A. Hutt, C. Liu, P.P. Conway, D.C. Whalley, and S.H. Mannan, IEEE Trans. Comp. Packaging Technol. 25, 98 (2002).
J.F. Rohan and G. O’Riordan, Microelectron. Eng. 65, 77 (2003).
M.O. Alam, Y.C. Chan, and K.C. Hung, Microelectron. Reliab. 42, 1065 (2002) and references therein.
J.W. Jang, P.G. Kim, K.N. Tu, D.R. Frear, and P. Thompson, J. Appl. Phys. 85, 8456 (1999) and references therein.
National Institute of Standards and Technology, “Database for Solder Properties with Emphasis on New Lead-Free Solders Release 4.0” Table 1.19 11 February 2002. http://www.boulder.nist.gov/div853/lead%20free/part1.html
C.Y. Lee and K.L. Lin, Thin Solid Films, 249, 201 (1994) and references therein.
Y.-D. Jeon, K.-W. Paik, K.-S. Bok, W.-S. Choi, and C.-L. Cho, Electronic Components Technology Conf. (Piscataway, NJ: IEEE, 2001), pp. 1326–1332 and references therein.
K.C. Hung, Y.C. Chan, C.W. Tang, and H.C. Ong, J. Mater. Res. 15, 2534 (2000).
M.O. Alam, Y.C. Chan, and K.C. Hung, J. Electron. Mater. 31, 1117 (2002).
K. Zeng and K.N. Tu, Mater. Sci. Eng. Rep. 38, 55 (2002).
H. Schmalgried, Solid State Reactions (New York: Academic Press, Inc., 1974), pp. 90–92.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Chen, W.M., Mccloskey, P., Byrne, P. et al. Degradation of electroless Ni(P) under-bump metallization in Sn3.5Ag and Sn37Pb solders during high-temperature storage. J. Electron. Mater. 33, 900–907 (2004). https://doi.org/10.1007/s11664-004-0218-3
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1007/s11664-004-0218-3