Abstract
Si4+-doped BaZr(BO3)2:Eu3+ phosphors are prepared by a conventional solid-state reaction. The influence of Si4+ addition on the charge transfer state of Eu3+-O2− and photoluminescence (PL) properties of BaZr(BO3)2:Eu3+ are discussed. Room temperature PL spectra indicated that efficient emission is obtained by Si do**. Increased values for the peak-peak ratio (PPR) of BaZr(BO3)2:Eu3+ at higher Si do** concentrations implied that the Eu3+ ion is located in a more asymmetric environment in BaZr0.8Si0.2(BO3)2:Eu3+ than in the undoped samples. The Judd-Ofelt parameters Ωλ (λ=2,4) were calculated from the PL data, giving results that were consistent with those from the PPR. The maximum radiative quantum efficiency was achieved at a Si do** concentration of 20 mol%.
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Zhang, Z., Li, G., Zhang, X. et al. Structural investigation and luminescent properties of BaZr(BO3)2:Eu3+ phosphors containing Si. Chin. Sci. Bull. 55, 3252–3255 (2010). https://doi.org/10.1007/s11434-010-4110-7
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DOI: https://doi.org/10.1007/s11434-010-4110-7