Abstract
In this paper, performance of PECVD SiO2/Si3N4 double layers electrets with different thicknesses were investigated detailedly in respect of chargeability, storage charge stability in high temperature and reliability in high humidity environment. Samples with different thicknesses of Si3N4 and SiO2 were prepared on Pyrex 7740 glass substrates and characterized by isothermal and high humidity charge decay. The results of experiment approved that the PECVD SiO2/Si3N4 double layers electrets on glass substrate has as good chargeability and charge stability in high temperature and high humidity environment as thermal oxidation or APCVD/LPCVD ones on silicon substrates. The experiment results indicated that a Si3N4 layer no less than 50 nm is necessary for good charge stability in high temperature and a Si3N4 layer thicker than 500 nm decreases the chargeability. Even a 2 nm Si3N4 layer is enough to significantly improve the charge stability in high humidity environment. Thick SiO2 layer can increase the surface potential of electrets under the same charging condition and its charge stability in high temperature. However, the electrets with high surface potential also exhibit poor uniformity of charge stability in high humidity environment.
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References
Hsieh W H, Hsu T Y, Tai Y C. A micromachined thin-film Teflon electret microphone. In: Proceedings of Solid State Sensors and Actuators TRANSDUCERS’ 97, Chicago, 1997. 425–428
Jiang J, Wang Z, Hao L, et al. Study on healing effect of PTFE electrets on old pig wound. In: Proceedings of Electrets, 9th International Symposium, Shanghai, 1996. 788–792
Tsutsumino T, Suzuki Y, Kasagi N, et al. Seismic power generator using high-performance polymer electret. In: Proceedings of 19th IEEE International conference on Micro Electro Mechanical System, Istanbul, 2006. 98–101
Amjadi H. Charge storage in double layers of thermally grown silicon dioxide and APCVD silicon nitride. IEEE Trns Dielectr Electr Insul, 1999, 6: 852–857
Leonov V, Florini P, Van Hoof C. Stabilization of positive charge in SiO2/Si3N4 electrets. IEEE Trns Dielectr Electr Insul, 2006, 13: 1049
Olthuis W, Bergveld P. On the charge storage and decay mechanism in silicon dioxide electrets. IEEE Trns Electr Insul, 1992, 27: 691
Amjadi H, Thielemann C. Silicon-based inorganic electrets for application in micromachined devices. IEEE Trns Dielectr Electr Insul, 1996, 3: 494
Chen Z, Lv Z, Zhang J. PECVD SiO2/Si3N4 double layers electrets on glass substrate. IEEE Trns Dielectr Electr Insul, 2008, 15: 915
Hong N, Hong J. Charge storage characteristics of SiO2/Si3/N4 double layer electret. In: Proceedings of the 2004 IEEE international Conference on solid dielectrics, 2004. 170
Amjadi H, Sessler G M. Charge storage in APCVD silicon nitride. In: Proceedings of IEEE Electrical Insulation and Dielectric Phenomena, Minneapolis, 1997. 64
Amjadi H. Investigations on charge storage and transport in plasmadeposited inorganic electrets. IEEE Trns Dielectr Electr Insul, 1999, 6: 236
Martin A D, Mclean K J. Effect of adsorbed gases on surface conductivity of quartz. J Appl Phys, 1977, 48: 2950
Williams R, Woods M H. High electric fields in silicon dioxide produced by corona charging. J Appl Phys, 1973, 44: 1026
Frohman-Bentchkowsky D. The metal-nitride-oxide-silicon (MNOS) transistor. IEEE Proc Charact Appl, 1970, 58: 1207
Sewell F A, et al. Charge storage model for variable threshold FET memory element. Appl Phys Lett, 1969, 14: 45
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Zou, X., Zhang, J. Study on PECVD SiO2/Si3N4 double-layer electrets with different thicknesses. Sci. China Technol. Sci. 54, 2123–2129 (2011). https://doi.org/10.1007/s11431-011-4423-z
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DOI: https://doi.org/10.1007/s11431-011-4423-z