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Electronic theory of irradiation-induced disoerdering and annealing in semiconductors

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Russian Physics Journal Aims and scope

Abstract

A new model of irradiation-induced disordering of semiconductors is proposed. According to this model, the disordered regions capable of self-annealing are stabilized by self-localized electronic excitations (electrons, holes, excitons). Pulsed annealing of these regions occurs through recombination of the electronic stoppers and dispersal of disordered regions thus takes place. This model agrees well with the experiments on amorphisation and laser pulse annealing.

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Authors and Affiliations

  1. Mirzo Ulugbek National University of Uzbekistan, Uzbekistan

    A. T. Mamadalimov

  2. Institute of Chemistry and Physics of Polymers Uz. AS, Russia

    B. L. Oksengendler & N. N. Turaeva

Authors
  1. A. T. Mamadalimov
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  2. B. L. Oksengendler
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  3. N. N. Turaeva
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp. 67–72, April 2006.

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Mamadalimov, A.T., Oksengendler, B.L. & Turaeva, N.N. Electronic theory of irradiation-induced disoerdering and annealing in semiconductors. Russ Phys J 49, 420–426 (2006). https://doi.org/10.1007/s11182-006-0120-y

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  • DOI: https://doi.org/10.1007/s11182-006-0120-y

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