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Design analysis of back-illuminated separated absorption and multiplication AlGaN APDs with polarization field

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Abstract

The p-type Al\(_\mathrm{x}\)Ga\(_{1-\mathrm{x}}\)N layer with different low Al-content is designed to utilize the polarization field to investigate the performance of back-illuminated separated absorption and multiplication AlGaN avalanche photodiodes. The results show that the avalanche breakdown voltage decreases and the multiplication gain increased as the Al content in the p-type layer decreases, which is due to the polarization field has the same direction as reverse bias field in the multiplication region. Moreover, the effects of both hole do** concentration in the p-Al\(_\mathrm{x}\)Ga\(_{1-\mathrm{x}}\)N layer and electron do** concentration in the inserted n-AlGaN layer on the performance of the designed APDs are studied in detail. It is demonstrated that the two parameters play important role on the device’s properties.

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Acknowledgments

This work is supported by the National Nature Science Foundation of China (Grant Nos. 11074280, 11201362), Natural Science of Foundation of Jiangsu Province (Grant No. BK2012110), the Fundamental Research Funds for Central Universities (Grant Nos. JUSRP11408, JUSRP51323B).

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Authors and Affiliations

  1. School of Science, Jiangnan University, Wuxi , 214122, China

    G. F. Yang

  2. Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and Engineering, Nan**g University, Nan**g , 210093, China

    G. F. Yang, F. **e & J. J. Xue

  3. China Electronics Technology Group Corporation, No. 38 Research Institute, Hefei , 230088, China

    F. **e

  4. Department of Electronic Engineering, Jiangnan University, Wuxi , 214122, China

    D. W. Yan & F. X. Wang

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  1. G. F. Yang
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  2. F. **e
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Correspondence to G. F. Yang.

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Yang, G.F., **e, F., Xue, J.J. et al. Design analysis of back-illuminated separated absorption and multiplication AlGaN APDs with polarization field. Opt Quant Electron 47, 735–742 (2015). https://doi.org/10.1007/s11082-014-9948-5

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