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High speed intracavity-contacted vertical cavity surface emitting lasers with separated quantum wells

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Abstract

In this work, the simulation of the 980 nm InGaAs intra-cavity-contacted oxide-confined vertical-cavity surface-emitting lasers (ICOC VCSELs) with separated triplets of quantum wells (STQW) is presented. We analyze the thermal, electrical and optical properties of such devices. Results of simulations show the larger optical power efficiency and higher modulation bandwidth for devices with included STQW.

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Authors and Affiliations

  1. Department of Information and Communications, Gwangju Institute of Science and Technology, 1, Oryong-dong, Buk-ku, Gwangju, 500-712, Republic of Korea

    V. V. Lysak, Y. M. Song & Yong Tak Lee

  2. Kharkov National University of Radio Electronics, 14, Lenin ave, 61166, Kharkov, Ukraine

    V. V. Lysak & I. M. Safonov

  3. Departamento de Electronica, FIMEE, Universidad de Guanajuato, Guanajuato, Mexico

    I. A. Sukhoivanov

Authors
  1. V. V. Lysak
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  2. I. M. Safonov
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  3. Y. M. Song
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  4. I. A. Sukhoivanov
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  5. Yong Tak Lee
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Correspondence to V. V. Lysak.

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Lysak, V.V., Safonov, I.M., Song, Y.M. et al. High speed intracavity-contacted vertical cavity surface emitting lasers with separated quantum wells. Opt Quant Electron 40, 1219–1225 (2008). https://doi.org/10.1007/s11082-009-9305-2

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  • DOI: https://doi.org/10.1007/s11082-009-9305-2

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