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Bulk acoustic wave (BAW) resonator-based MEMS magnetic field sensor

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Abstract

This paper experimentally demonstrates a MEMS magnetic field sensor which is working at ∼ 0.873 GHz resonant frequency. The Bulk Acoustic Wave (BAW) resonators are most suitable for high-frequency (GHz) operation and, therefore, appropriate for high-sensitivity magnetic field sensors. The sensor has a multilayer stack of (Si/SiO2/Pt/ZnO/Fe65Co35) thin films with Fe65Co35 as a magnetic field-sensing layer and Zinc Oxide (ZnO) as piezoelectric actuation layer. The influence of an external applied magnetic field up to 1847 Oe has been investigated in terms resonance frequency shift due to ΔE effect. The magnetic sensor shows sensitivity (S) of 48.23 ppm/mT with outstanding performance at high frequency and large magnetic field range (0–1847 Oe). The developed MEMS magnetic field sensors are compact, exceptionally sensitive, and possess potential utility in diverse sectors, including automotive, defense, robotics, medical apparatus, space technology, geophysics, and industrial gauging.

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Funding

The authors are thankful to the Director CSIR-CEERI Pilani for continuous support and encouragement. This research work was financially supported by the DRDO Grant No. DGTM/ARDB/GIA/22–23/092, DST-Science, and Engineering Research Board (SERB), Grant No. CRG/2021/000833, and UGC SRF fellowship (award no. 3737/(NET-JULY.2018)).

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Vinita: Writing—original draft, Writing—Review and Editing, Investigation, Data Curation, Methodology, Software, Visualizations, Formal analysis. Jitendra Singh: Conceptualization, Supervision, writing—Review and Editing, Project administration, Funding acquisition, Validation, Data Curation.

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Correspondence to Vinita or Jitendra Singh.

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Vinita, Singh, J. Bulk acoustic wave (BAW) resonator-based MEMS magnetic field sensor. J Mater Sci: Mater Electron 35, 720 (2024). https://doi.org/10.1007/s10854-024-12472-0

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