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Phenomenology of M–N rule and high-field conduction in Ge–Te–Se–Sc rare-earth doped glasses

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Abstract

In present work, electronic transport behavior of Te(1-x)(GeSe0.5)Scx (0 ≤ x ≤ 0.15) glasses have been studied. The material having disc shaped geometry have been utilized for I–V measurements at different temperature less than glass transition temperature. Compensation effect has been observed in thermally activated resistive switching in studied glasses. Poole–Frenkel mechanism for conduction has been observed in the glasses studied. By experimental data fitting, bipolar hop** has been observed in the samples. By CBH model analysis, density of defect states (N) has been evaluated. The compositional dependence of N shows minima at x = 0.1 which can be explained in terms of mechanically stabilized structure.

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Acknowledgements

This research received support from the Council of Science and Technology, U.P. (Major Research Project ID-559, Reference No: CST UP D/2286), Researchers Supporting Project Number (RSP2024R441), King Saud University, Riyadh, Saudi Arabia.

Funding

Major Research Project ID-559, Reference No: CST-UP D/2286, Council of Science and Technology, U.P., India. Project Number (RSP2024R441), King Saud University.

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Authors and Affiliations

  1. Photonics and Photovoltaic Research Lab, Department of Physics and Material Science, Madan Mohan Malviya University of Technology, Gorakhpur, 273010, India

    Surbhi Agarwal & D. K. Dwivedi

  2. Department of Electronics and Communication Engineering, Madan Mohan Malviya University of Technology, Gorakhpur, 273010, India

    Pooja Lohia

  3. Department of Physics, Harcourt Butler Technical University, Kanpur, 208002, India

    Suresh Kumar Sharma

  4. Department of Chemistry, College of Science, King Saud University, 11451, Riyadh, Saudi Arabia

    Mohamed A. Habila

  5. Institute of Electronics, Atomic Energy Research Establishment, Bangladesh Atomic Energy Commission, Dhaka, 1349, Bangladesh

    M. Khalid Hossain

  6. Department of Advanced Energy Engineering Science, Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Fukuoka, 816-8580, Japan

    M. Khalid Hossain

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  1. Surbhi Agarwal
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Contributions

Surbhi Agarwal: Conceptualization, Data curation, Formal Analysis, Methodology, Software, Validation, Writing—original draft; DK Dwivedi, Pooja Lohia: Data curation, Formal Analysis, Project administration, Resources, Investigation, Validation, Visualization; Suresh Kumar Sharma: Investigation, Validation, Software, Visualization; Mohamed A. Habila: Editing and validation, M. Khalid Hossain: Analysis and editing draft.

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Correspondence to D. K. Dwivedi or M. Khalid Hossain.

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Agarwal, S., Dwivedi, D.K., Lohia, P. et al. Phenomenology of M–N rule and high-field conduction in Ge–Te–Se–Sc rare-earth doped glasses. J Mater Sci: Mater Electron 35, 382 (2024). https://doi.org/10.1007/s10854-024-12071-z

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