Abstract
The ferroelectric polarization of the thin film materials obtained from the measured hysteresis loops may not be entirely derived from the actual ferro-domain switching. In order to effectively distinguish and evaluate the contribution of domain switching polarization, dielectric displacement and electric conductivity to the electric displacement of ferroelectric films, here, polycrystalline BaTiO3 (BTO) films were grown on Si substrates by sol-gel spin-coating method. The sol-gel process and the post-annealing parameters dependent micro-crystal-structure, dielectric response, ferroelectric, especially the characteristics of electric displacement were investigated. For BTO ferroelectric films obtained under the optimized processing parameters, the measured current (I)-time (t) curves as well as current (I)-voltage (V) curves were suggested to evaluate the impacts of each part. The result reveals that the electric displacement of our BTO films is due to the combined contribution of the above three parts. In addition to being distinguished by I–V, the contribution of each part can also be separated by their characteristic I–t, which can also provide some important parameters in the domain switching process.
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The data that support the findings of this study are available from the corresponding author upon reasonable request.
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Acknowledgements
This work was supported by the National Natural Science Foundation of China (NSFC) (Grant No. 51602160) and Natural Science Foundation of Jiangsu Province (Grant No. BK20150842). We would also like to thank the talent project of Nan**g University of Posts and Telecommunications (NUPTSF) (Grant Nos. NY222127, NY214161 and NY215087).
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All authors contributed to the conception and design. The experimental investigations and characterizations were conducted by JL and HZ. Acquisition of data, and analysis were performed by HZ, WY and WZ. The first draft of the manuscript was written by JL which was improved by WZ. All authors commented on previous versions of the manuscript and all authors read and approved the final manuscript.
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Li, J., Zhang, H., Yao, W. et al. Investigation of electric displacement characteristics in sol–gel derived BaTiO3 polycrystalline films. J Mater Sci: Mater Electron 34, 640 (2023). https://doi.org/10.1007/s10854-023-09936-0
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DOI: https://doi.org/10.1007/s10854-023-09936-0