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The effect of thermal annealing on Ti/p-Si Schottky diodes

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Abstract

Ti/p-Si Schottky barrier diodes (SBDs) have been prepared by metal evaporating method. The effect of low annealing temperature on electrical parameters such as series resistance (Rs), ideality factor (n) and barrier height (Φb) of Ti/p-Si Schottky diodes was investigated with the help of current–voltage (I–V) and capacitance–voltage (C–V) characteristics. Schottky diodes have been annealed at temperatures from 50 to 200 °C for 1 min in N2 atmosphere. Φb, Rs and n were determined using Cheung and Norde functions in current–voltage characteristics. The Schottky barrier height of the as-deposited contact is found to be 0.747 eV (I–V), 1.038 eV (C–V), 0.622 eV [H(I)–I] and 0.786 eV [F(V)–V] and ideality factor as 1.3 (I–V) and 3.55 [dV/d(lnI)–I]. It has been seen that the barrier height, ideality factor and series resistance have changed with increasing annealing temperature up to 200 °C.

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Authors and Affiliations

  1. Isparta University of Applied Sciences, Isparta, Turkey

    H. Asıl Uğurlu

  2. Atatürk University, Erzurum, Turkey

    K. Çınar Demir

  3. Giresun University, Giresun, Turkey

    C. Coşkun

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  1. H. Asıl Uğurlu
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  2. K. Çınar Demir
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  3. C. Coşkun
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Correspondence to H. Asıl Uğurlu.

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Asıl Uğurlu, H., Çınar Demir, K. & Coşkun, C. The effect of thermal annealing on Ti/p-Si Schottky diodes. J Mater Sci: Mater Electron 32, 15343–15351 (2021). https://doi.org/10.1007/s10854-021-06084-1

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