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The optimization of contact interface between metal/MoS2 FETs by oxygen plasma treatment

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Abstract

The quality of the contact is key for the performance enhancement of the MoS2 device. As the oxygen plasma treatment is developed in the fabrication of MoS2 field effect transistor (FET), we demonstrate that the tunneling layer (MoO3) is formed on the top of the MoS2 contact region and the process induced organic residues in the source and drain regions is effectively removed. The formation of MoO3 can degrade the Fermi level pinning effect at the MoS2/metal interface and lowering the Schottky barrier height. And the flatness of the interface has been greatly improved, with the roughness reduced from 0.53 to 0.166 nm. In this paper, we improve the device performance with an on-/off-current ratio increase by four orders of magnitude, a mobility increase by 10 times at room temperature and the 33-fold decrease in contact resistance. This research shows that oxygen plasma treatment is a promising method for the integration of MoS2 FET in the future.

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Acknowledgements

This work was supported by the MOST of China (Grant No. 2016YFA0202300), the NSFC (Grant Nos. 61774168 and 11764008).

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Authors and Affiliations

  1. Key Laboratory of Microelectronics Device & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Bei**g, 100029, China

    Yadong Zhang, Kunpeng Jia, Yu Pan, Kun Luo, Jiahan Yu, Yongkui Zhang, Zhenhua Wu & Huaxiang Yin

  2. Tian** Key Laboratory of Electronic Materials and Devices, School of Electronics and Information Engineering, Hebei University of Technology, Tian**, 300401, China

    Yadong Zhang & Hanmin Tian

  3. College of Mechanical and Electrical Engineering, Guizhou Minzu University, Guiyang, 550025, China

    Jiangtao Liu

  4. University of Chinese Academy of Sciences, Bei**g, 100049, China

    Zhenhua Wu & Huaxiang Yin

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  1. Yadong Zhang
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Correspondence to Jiangtao Liu or Zhenhua Wu.

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Zhang, Y., Jia, K., Liu, J. et al. The optimization of contact interface between metal/MoS2 FETs by oxygen plasma treatment. J Mater Sci: Mater Electron 31, 9660–9665 (2020). https://doi.org/10.1007/s10854-020-03511-7

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  • DOI: https://doi.org/10.1007/s10854-020-03511-7

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